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ONSEMI

Onsemi Ntmfs6H800Nt1G

About The MOSFET, N-CH, 80V, 203A, DFN-5; Transistor Polarity:N Channel; Continuous Drain Current Id:203A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0. of Pins:5Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

MOSFET, N-CH, 80V, 203A, DFN-5; Transistor Polarity:N Channel; Continuous Drain Current Id:203A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:200W; Transistor Case Style:DFN; No. of Pins:5Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

Semiconductors - Discretes

Onsemi Ntmfs6H800Nt1G

Semiconductors - Discretes

Specifications of Onsemi Ntmfs6H800Nt1G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Ntmfs6H800Nt1G
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MOSFET, AEC-Q101, DUAL N-CH, 60V, DFN-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:111A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:125W; Transistor Case Style:DFN; No.
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    • MOSFET, AEC-Q101, DUAL N-CH, 40V, DFN-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:40W; Transistor Case Style:DFN; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, AEC-Q101, DUAL N-CH, 40V, DFN-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:40W; Transistor Case Style:DFN; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N-CH, 40V, 59A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:40W; Transistor Case Style:TO-252; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N-CH, 80V, 203A, DFN-5; Transistor Polarity:N Channel; Continuous Drain Current Id:203A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:200W; Transistor Case Style:DFN; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N-CH, 40V, 59A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:40W; Transistor Case Style:TO-252; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N-CH, 80V, 203A, DFN-5; Transistor Polarity:N Channel; Continuous Drain Current Id:203A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:200W; Transistor Case Style:DFN; No.
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  • ONSEMI
    • SIC SCHOTTKY DIODE, 650V, 16A, TO-220-2; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:16A; Total Capacitive Charge Qc:52nC; Diode Case Style:TO-220; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • MOSFET, N-CH, 80V, 203A, DFN-5; Transistor Polarity:N Channel; Continuous Drain Current Id:203A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:200W; Transistor Case Style:DFN; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • SIC SCHOTTKY DIODE, 650V, 16A, TO-220-2; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:16A; Total Capacitive Charge Qc:52nC; Diode Case Style:TO-220; No.
  • Eletrônicos
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  • ONSEMI