IGBT, MODULE, N-CH, 1.2KV, 55A; Transistor Polarity:N Channel; DC Collector Current:67A; Collector Emitter Saturation Voltage Vce(on):2.35V; Power Dissipation Pd:158mW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:PIM; No. of Pins:20Pins; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (15-Jan-2018)
Semiconductors - Discretes
Onsemi Nxh80T120L2Q0S2G
Specifications of Onsemi Nxh80T120L2Q0S2G | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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