MOSFET, N-CH, AEC-Q101, 60V, 180A, TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:250W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018)
Semiconductors - Discretes
Infineon Ipb180N06S4H1Atma2
Specifications of Infineon Ipb180N06S4H1Atma2 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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