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Onsemi Mjd253T4G

About The 5W; DC Collector Current:-4A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-252; No.TRANSISTOR, PNP, -100V, -4A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:12

TRANSISTOR, PNP, -100V, -4A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:12.5W; DC Collector Current:-4A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

Semiconductors - Discretes

Onsemi Mjd253T4G

Semiconductors - Discretes

Specifications of Onsemi Mjd253T4G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Mjd253T4G
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Rating :- 8.24 /10
Votes :- 56
TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

Onsemi Mjd31Crlg of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, 60V, 10A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:2MHz; Power Dissipation Pd:1.75W; DC Collector Current:10A; DC Current Gain hFE:5hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, NPN, 60V, 10A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:2MHz; Power Dissipation Pd:1.75W; DC Collector Current:10A; DC Current Gain hFE:5hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd3055T4G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, -100V, -4A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:12.5W; DC Collector Current:-4A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, PNP, -100V, -4A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:12.5W; DC Collector Current:-4A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd253T4G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, -25V, -5A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-25V; Transition Frequency ft:65MHz; Power Dissipation Pd:1.4W; DC Collector Current:-5A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, PNP, -25V, -5A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-25V; Transition Frequency ft:65MHz; Power Dissipation Pd:1.4W; DC Collector Current:-5A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd210T4G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, -100V, -2A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:25MHz; Power Dissipation Pd:1.75W; DC Collector Current:-2A; DC Current Gain hFE:200hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, PNP, -100V, -2A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:25MHz; Power Dissipation Pd:1.75W; DC Collector Current:-2A; DC Current Gain hFE:200hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd117T4G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, 60V, 10A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:2MHz; Power Dissipation Pd:1.75W; DC Collector Current:10A; DC Current Gain hFE:5hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, NPN, 60V, 10A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:2MHz; Power Dissipation Pd:1.75W; DC Collector Current:10A; DC Current Gain hFE:5hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd3055T4G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, -100V, -4A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:12.5W; DC Collector Current:-4A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, PNP, -100V, -4A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:12.5W; DC Collector Current:-4A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd253T4G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, -25V, -5A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-25V; Transition Frequency ft:65MHz; Power Dissipation Pd:1.4W; DC Collector Current:-5A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, PNP, -25V, -5A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-25V; Transition Frequency ft:65MHz; Power Dissipation Pd:1.4W; DC Collector Current:-5A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd210T4G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, -100V, -4A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:12.5W; DC Collector Current:-4A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, PNP, -100V, -4A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:40MHz; Power Dissipation Pd:12.5W; DC Collector Current:-4A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd253T4G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, -25V, -5A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-25V; Transition Frequency ft:65MHz; Power Dissipation Pd:1.4W; DC Collector Current:-5A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, PNP, -25V, -5A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-25V; Transition Frequency ft:65MHz; Power Dissipation Pd:1.4W; DC Collector Current:-5A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd210T4G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI