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ONSEMI

Onsemi Njvmjd32Ct4G

About The TRANSISTOR, AEC-Q101, PNP, 100V, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

TRANSISTOR, AEC-Q101, PNP, 100V, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

Semiconductors - Discretes

Onsemi Njvmjd32Ct4G

Semiconductors - Discretes

Specifications of Onsemi Njvmjd32Ct4G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Njvmjd32Ct4G
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Votes :- 51
TRANSISTOR, AEC-Q101, PNP, 100V, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

TRANSISTOR, AEC-Q101, PNP, 100V, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

Onsemi Njvmjd32Ct4G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, AEC-Q101, NPN, 50V, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:50MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-59; No.

    TRANSISTOR, AEC-Q101, NPN, 50V, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:50MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-59; No.

    Onsemi Msc2712Gt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • BIPOLAR TRANSISTOR, PNP, -300V, SC-70-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:150mW; DC Collector Current:500mA; DC Current Gain hFE:120hFE; Transistor Case Style:SC-70; No.

    BIPOLAR TRANSISTOR, PNP, -300V, SC-70-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:150mW; DC Collector Current:500mA; DC Current Gain hFE:120hFE; Transistor Case Style:SC-70; No.

    Onsemi Msb92Aswt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, 50V, 0.2A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:700MHz; Power Dissipation Pd:225mW; DC Collector Current:200mA; DC Current Gain hFE:250hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, NPN, 50V, 0.2A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:700MHz; Power Dissipation Pd:225mW; DC Collector Current:200mA; DC Current Gain hFE:250hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt6428Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, -40V, -0.6A, SC-70; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:200MHz; Power Dissipation Pd:150mW; DC Collector Current:-600mA; DC Current Gain hFE:20hFE; Transistor Case Style:SC-70; No.

    TRANSISTOR, PNP, -40V, -0.6A, SC-70; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:200MHz; Power Dissipation Pd:150mW; DC Collector Current:-600mA; DC Current Gain hFE:20hFE; Transistor Case Style:SC-70; No.

    Onsemi Mmbt4403Wt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, 230V, 15A, TO-247; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency ft:30MHz; Power Dissipation Pd:200W; DC Collector Current:15A; DC Current Gain hFE:12hFE; Transistor Case Style:TO-247; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, AEC-Q101, PNP, 100V, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, AEC-Q101, PNP, 100V, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    Onsemi Njvmjd32Ct4G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd31Crlg of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, AEC-Q101, PNP, 100V, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, AEC-Q101, PNP, 100V, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    Onsemi Njvmjd32Ct4G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, NPN, 100V, 3A, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    Onsemi Mjd31Crlg of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI