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ONSEMI

Onsemi Msc2712Gt1G

About The of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).TRANSISTOR, AEC-Q101, NPN, 50V, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:50MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-59; No

TRANSISTOR, AEC-Q101, NPN, 50V, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:50MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-59; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Onsemi Msc2712Gt1G

Semiconductors - Discretes

Specifications of Onsemi Msc2712Gt1G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Msc2712Gt1G
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Eletrônicos
Componentes e placas de circuitos

Rating :- 8.22 /10
Votes :- 51
BIPOLAR TRANSISTOR, PNP, 100V, TO-252-4; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:100MHz; Power Dissipation Pd:33W; DC Collector Current:3A; DC Current Gain hFE:50hFE; Transistor Case Style:TO-252; No.

BIPOLAR TRANSISTOR, PNP, 100V, TO-252-4; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:100MHz; Power Dissipation Pd:33W; DC Collector Current:3A; DC Current Gain hFE:50hFE; Transistor Case Style:TO-252; No.

Onsemi Nss1C300Et4G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • BIPOLAR TRANSISTOR, PNP, -100V, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:120MHz; Power Dissipation Pd:2W; DC Collector Current:2A; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-223; No.

    BIPOLAR TRANSISTOR, PNP, -100V, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:120MHz; Power Dissipation Pd:2W; DC Collector Current:2A; DC Current Gain hFE:150hFE; Transistor Case Style:SOT-223; No.

    Onsemi Nss1C200Mz4T1G of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, AEC-Q101, NPN, 50V, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:50MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-59; No.

    TRANSISTOR, AEC-Q101, NPN, 50V, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:50MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-59; No.

    Onsemi Msc2712Gt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • BIPOLAR TRANSISTOR, PNP, -300V, SC-70-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:150mW; DC Collector Current:500mA; DC Current Gain hFE:120hFE; Transistor Case Style:SC-70; No.

    BIPOLAR TRANSISTOR, PNP, -300V, SC-70-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:50MHz; Power Dissipation Pd:150mW; DC Collector Current:500mA; DC Current Gain hFE:120hFE; Transistor Case Style:SC-70; No.

    Onsemi Msb92Aswt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, NPN, 50V, 0.2A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:700MHz; Power Dissipation Pd:225mW; DC Collector Current:200mA; DC Current Gain hFE:250hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, NPN, 50V, 0.2A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:700MHz; Power Dissipation Pd:225mW; DC Collector Current:200mA; DC Current Gain hFE:250hFE; Transistor Case Style:SOT-23; No.

    Onsemi Mmbt6428Lt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, PNP, -40V, -0.6A, SC-70; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:200MHz; Power Dissipation Pd:150mW; DC Collector Current:-600mA; DC Current Gain hFE:20hFE; Transistor Case Style:SC-70; No.

    TRANSISTOR, PNP, -40V, -0.6A, SC-70; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:200MHz; Power Dissipation Pd:150mW; DC Collector Current:-600mA; DC Current Gain hFE:20hFE; Transistor Case Style:SC-70; No.

    Onsemi Mmbt4403Wt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, AEC-Q101, PNP, 100V, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, AEC-Q101, PNP, 100V, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    Onsemi Njvmjd32Ct4G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, AEC-Q101, NPN, 50V, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:50MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-59; No.

    TRANSISTOR, AEC-Q101, NPN, 50V, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:50MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-59; No.

    Onsemi Msc2712Gt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, AEC-Q101, PNP, 100V, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    TRANSISTOR, AEC-Q101, PNP, 100V, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    Onsemi Njvmjd32Ct4G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI
    • TRANSISTOR, AEC-Q101, NPN, 50V, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:50MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-59; No.

    TRANSISTOR, AEC-Q101, NPN, 50V, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:50MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SC-59; No.

    Onsemi Msc2712Gt1G of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • ONSEMI