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Vishay Si4850Bdy-T1-Ge3

About The 8V; Power Dissipation Pd:4.3A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11

MOSFET, N-CH, 60V, 11.3A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:4.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

Semiconductors - Discretes

Vishay Si4850Bdy-T1-Ge3

Semiconductors - Discretes

Specifications of Vishay Si4850Bdy-T1-Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Si4850Bdy-T1-Ge3
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Rating :- 8.18 /10
Votes :- 52
MOSFET, N-CH, 60V, 12A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:35.7W; Transistor Case Style:PowerPAK SO; No.

MOSFET, N-CH, 60V, 12A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:35.7W; Transistor Case Style:PowerPAK SO; No.

Vishay Si7850Adp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, DUAL N-CH, 60V, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:2.8W; Transistor Case Style:SOIC; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 60V, 11.3A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:4.5W; Transistor Case Style:SOIC; No.

    MOSFET, N-CH, 60V, 11.3A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:4.5W; Transistor Case Style:SOIC; No.

    Vishay Si4850Bdy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
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  • VISHAY
    • MOSFET, N-CH, 60V, 73A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 60V, 73A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

    Vishay Sir184Dp-T1-Re3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 60V, 12A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:35.7W; Transistor Case Style:PowerPAK SO; No.

    MOSFET, N-CH, 60V, 12A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:35.7W; Transistor Case Style:PowerPAK SO; No.

    Vishay Si7850Adp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, DUAL N-CH, 60V, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:2.8W; Transistor Case Style:SOIC; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 60V, 11.3A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:4.5W; Transistor Case Style:SOIC; No.

    MOSFET, N-CH, 60V, 11.3A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:4.5W; Transistor Case Style:SOIC; No.

    Vishay Si4850Bdy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N CH, 100V, 65.8A, POWERPAK SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:65.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0066ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N-CH, 60V, 11.3A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:4.5W; Transistor Case Style:SOIC; No.

    MOSFET, N-CH, 60V, 11.3A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:4.5W; Transistor Case Style:SOIC; No.

    Vishay Si4850Bdy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N CH, 100V, 65.8A, POWERPAK SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:65.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0066ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY