Vishay Sir184Dp-T1-Re3

Rating :- 8.18 /10

Votes :- 54

MOSFET, N CH, 100V, 95A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V

Vishay Sidr870Adp-T1-Ge3.

MOSFET, P-CH, -30V, -60A, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

Vishay Sira01Dp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150Â°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

MOSFET, N-CH, 40V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):730Âµohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No.

Vishay Sir638Adp-T1-Re3 of Pins:8Pins; Operating Temperature Max:150Â°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

MOSFET, N-CH, 60V, 12A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:35.7W; Transistor Case Style:PowerPAK SO; No.

Vishay Si7850Adp-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150Â°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

MOSFET, DUAL N-CH, 60V, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:2.8W; Transistor Case Style:SOIC; No.

Vishay Si4946Cdy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

MOSFET, N-CH, 60V, 11.3A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:4.5W; Transistor Case Style:SOIC; No.

Vishay Si4850Bdy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150Â°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

MOSFET, N-CH, 60V, 73A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

Vishay Sir184Dp-T1-Re3 of Pins:8Pins; Operating Temperature Max:150Â°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

MOSFET, N-CH, 60V, 12A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:35.7W; Transistor Case Style:PowerPAK SO; No.

MOSFET, N-CH, 60V, 73A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power Dissipation Pd:62.5W; Transistor Case Style:PowerPAK SO; No.

MOSFET, N-CH, 60V, 12A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:35.7W; Transistor Case Style:PowerPAK SO; No.