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Microchip Tn0104N8-G

About The 6V; Power Dissipation Pd:1.MOSFET, N-CH, 40V, 0

MOSFET, N-CH, 40V, 0.63A, TO-243AA; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:40V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:1.6W; Transistor Case Style:TO-243AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:TN0104 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

Semiconductors - Discretes

Microchip Tn0104N8-G

More from MICROCHIP? MOSFET, N-CH, 40V, 0.63A, TO-243AA; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:40V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:1.6W; Transistor Case Style:TO-243AA; No.
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Semiconductors - Discretes

Specifications of Microchip Tn0104N8-G

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Microchip Tn0104N8-G
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Rating :- 8.12 /10
Votes :- 53
GAS FLOW SENSOR, 2L/MIN, 5MM, 3V-5V; Flow Rate:-; Flow Rate Max:-; Pressure Max:-; Supply Voltage DC Min:3V; Supply Voltage DC Max:5V; Accuracy %:-; Port Size:-; Product Range:FS1012 Series; SVHC:No SVHC (15-Jan-2018)
  • Ferragens
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  • Sensores e ferramentas para medição
  • Medidores e controladores de fluxo
  • Sensors & Transducers
  • RENESAS
    • GAS FLOW SENSOR, 10L/MIN, 5MM, 5.25V; Flow Rate:-; Flow Rate Max:-; Pressure Max:-; Supply Voltage DC Min:4.75V; Supply Voltage DC Max:5.25V; Accuracy %:-; Port Size:-; Product Range:FS2012 Series; SVHC:No SVHC (15-Jan-2018)
  • Ferragens
  • Ferramentas
  • Sensores e ferramentas para medição
  • Medidores e controladores de fluxo
  • Sensors & Transducers
  • RENESAS
    • MOSFET, P-CH, -100V, -0.12A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-120mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):9ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Power Dissipation Pd:360mW; Transistor Case Style:SOT-23; No.
  • Eletrônicos
  • Componentes e placas de circuitos
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  • MICROCHIP
    • MOSFET, P-CH, -100V, -0.12A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-120mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):9ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Power Dissipation Pd:360mW; Transistor Case Style:SOT-23; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • MICROCHIP
    • MOSFET, P-CH, -100V, -0.12A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-120mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):9ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3.5V; Power Dissipation Pd:360mW; Transistor Case Style:SOT-23; No.
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