reorder
ALWAYS Be Happy search home
c
Combo Blog
Categories
Play Games New
Eletrônicos
Componentes e placas de circuitos
Semicondutores
Semiconductors - Discretes
VISHAY

Vishay Sqs401En-T1_Ge3

About The MOSFET, P-CH, -40V, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.02ohm; Available until stocks are exhausted Alternative available

MOSFET, P-CH, -40V, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.02ohm; Available until stocks are exhausted Alternative available

Semiconductors - Discretes

Vishay Sqs401En-T1_Ge3

Semiconductors - Discretes

Specifications of Vishay Sqs401En-T1_Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
Instockinstock

Last Updated

Vishay Sqs401En-T1_Ge3
More Varieties
Eletrônicos
Componentes e placas de circuitos

Rating :- 8.09 /10
Votes :- 51
MOSFET, AUTO, P-CH, -60V, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-52A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:83W; Transistor Case Style:PowerPAK SO; No.

MOSFET, AUTO, P-CH, -60V, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-52A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:83W; Transistor Case Style:PowerPAK SO; No.

Vishay Sqj459Ep-T1_Ge3 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, AEC-Q101, P-CH, -60V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:46W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, P-CH, -60V, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:46W; Transistor Case Style:TO-252; No.

    Vishay Sqd19P06-60L_Ge3 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P-CH, -30V, -35A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power Dissipation Pd:52.1W; Transistor Case Style:PowerPAK 1212; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P-CH, -30V, -35A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power Dissipation Pd:52.1W; Transistor Case Style:PowerPAK 1212; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P-CH, -30V, -35A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power Dissipation Pd:52.1W; Transistor Case Style:PowerPAK 1212; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY