MOSFET, P-CH, -30V, -35A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power Dissipation Pd:52.1W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
Semiconductors - Discretes
Vishay Si7129Dn-T1-Ge3
Specifications of Vishay Si7129Dn-T1-Ge3 | |
---|---|
Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
Last Updated