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Vishay Sqj459Ep-T1_Ge3

About The MOSFET, AUTO, P-CH, -60V, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-52A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:83W; Transistor Case Style:PowerPAK SO; No

MOSFET, AUTO, P-CH, -60V, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-52A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2V; Power Dissipation Pd:83W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

Semiconductors - Discretes

Vishay Sqj459Ep-T1_Ge3

Semiconductors - Discretes

Specifications of Vishay Sqj459Ep-T1_Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Sqj459Ep-T1_Ge3
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