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Stmicroelectronics Stgwt30V60F

About The of Pins:3Pins; Operating Temperature Max:175°C; Product Range:V Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018).85V; Power Dissipation Pd:260W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-3P; No

IGBT, SINGLE, 600V, 60A, TO-3P; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:260W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:V Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)

Semiconductors - Discretes

Stmicroelectronics Stgwt30V60F

Semiconductors - Discretes

Specifications of Stmicroelectronics Stgwt30V60F

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Stmicroelectronics Stgwt30V60F
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Rating :- 9.95 /10
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IR RECEIVER, 30M, 0.08MW/M2, SIDE TH; Carrier Frequency:36kHz; IR Receiver Mounting Style:Side View Through Hole; Remote Control Code:MCIR, Panasonic, RC-6; Transmission Range:30m; A; Available until stocks are exhausted
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    • IR RECEIVER, 30M, 0.08MW/M2, SIDE TH; Carrier Frequency:38kHz; IR Receiver Mounting Style:Side View Through Hole; Remote Control Code:RC-5, RC-6, NEC, r-step, Sony, RCA 56 kHz; Trans; Available until stocks are exhausted
  • Eletrônicos
  • Optoelectronics & Displays
  • VISHAY
    • IR RECEIVER, 30M, 0.08MW/M2, SIDE TH; Carrier Frequency:36kHz; IR Receiver Mounting Style:Side View Through Hole; Remote Control Code:RC-5, RC-6, NEC, r-step, Sony, RCA 56 kHz; Trans; Available until stocks are exhausted
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  • VISHAY
    • MOSFET, N-CH, 650V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:210W; Transistor Case Style:TO-247; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • STMICROELECTRONICS
    • MOSFET, N-CH, 650V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:210W; Transistor Case Style:TO-247; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • STMICROELECTRONICS