Nexperia Psmn3R7-100Bsej
About The 66V; Power Dissipation Pd:405W; Transistor Case Style:TO-263; No.MOSFET, 100V, 120A, 175DEG C, 405W; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0
MOSFET, 100V, 120A, 175DEG C, 405W; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.00336ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.66V; Power Dissipation Pd:405W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Semiconductors - Discretes
Nexperia Psmn3R7-100Bsej
Semiconductors - Discretes
Specifications of Nexperia Psmn3R7-100Bsej | |
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| Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
| Instock | instock |
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