MOSFET, N-CH, 30V, HSMT; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:2W; Transistor Case Style:HSMT; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Semiconductors - Discretes
Rohm Rq3E160Adtb
Specifications of Rohm Rq3E160Adtb | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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