Infineon Fp35R12W2T4Pbpsa1

Rating :- 8.13 /10

Votes :- 53

MOSFET, N-CH, 30V, 100A, 115W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:115W; Transistor Case Style:TDSON; No.

Infineon Bsc011N03Lstatma1 of Pins:8Pins; Operating Temperature Max:175Â°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

MOSFET, N-CH, 40 V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:167W; Transistor Case Style:TDSON; No.

Infineon Bsc010N04Lstatma1 of Pins:8Pins; Operating Temperature Max:175Â°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

INTELLIGENT PWR MODULE, 1.2V, 8A, DIP; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):1.2kV; Current Rating (Ic / Id):8A; Isolation Voltage:2.5kV; IPM Case Style:DIP; IPM Series:CIPOS Maxi; Product Range:-; SVHC:No SVHC (27-Jun-2018)

Infineon Im818Sccxkma1.

MOSFET, N-CH, 30V, 100A, 115W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:115W; Transistor Case Style:TDSON; No.

Infineon Bsc011N03Lstatma1 of Pins:8Pins; Operating Temperature Max:175Â°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

IGBT MOD, DUAL N CH, 1.2KV, 450A; Transistor Polarity:Dual N Channel; DC Collector Current:450A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No.

Infineon Iff450B12Me4Pb11Bpsa1 of Pins:-; Operating Temperature Max:150Â°C; Product Range:EconoDUAL 3 Series; SVHC:No SVHC (27-Jun-2018).

MOSFET, N-CH, 1.2KV, 25A; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:-; ; Available until stocks are exhausted

Infineon Fs45Mr12W1M1B11Boma1.

IGBT MOD, SIX N CHANNEL, 1.2KV, 35A; Transistor Polarity:Six N Channel; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No.

Infineon Fp35R12W2T4Pbpsa1 of Pins:-; Operating Temperature Max:150Â°C; Product Range:EasyPIM 2B Series; SVHC:No SVHC (27-Jun-2018).

IGBT MOD, SIX N CHANNEL, 1.2KV, 35A; Transistor Polarity:Six N Channel; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No.

Infineon Fp35R12W2T4Pb11Bpsa1 of Pins:-; Operating Temperature Max:150Â°C; Product Range:EasyPIM 2B Series; SVHC:No SVHC (27-Jun-2018).

IGBT MOD, SIX N CHANNEL, 1.2KV, 35A; Transistor Polarity:Six N Channel; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No.

Infineon Fp35R12W2T4Pbpsa1 of Pins:-; Operating Temperature Max:150Â°C; Product Range:EasyPIM 2B Series; SVHC:No SVHC (27-Jun-2018).

IGBT MOD, SIX N CHANNEL, 1.2KV, 35A; Transistor Polarity:Six N Channel; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No.

Infineon Fp35R12W2T4Pb11Bpsa1 of Pins:-; Operating Temperature Max:150Â°C; Product Range:EasyPIM 2B Series; SVHC:No SVHC (27-Jun-2018).