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INFINEON

Infineon Fs45Mr12W1M1B11Boma1

About The 045ohm; Rds(on) Test Voltage Vgs:-; ; Available until stocks are exhausted.2KV, 25A; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:1

MOSFET, N-CH, 1.2KV, 25A; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:-; ; Available until stocks are exhausted

Semiconductors - Discretes

Infineon Fs45Mr12W1M1B11Boma1

More from INFINEON? MOSFET, N-CH, 1.2KV, 25A; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:-; ; Available Until Stocks Are Exhausted
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Semiconductors - Discretes

Specifications of Infineon Fs45Mr12W1M1B11Boma1

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Infineon Fs45Mr12W1M1B11Boma1
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Rating :- 8.11 /10
Votes :- 50
MOSFET, N-CH, 30V, 100A, 115W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:115W; Transistor Case Style:TDSON; No.

MOSFET, N-CH, 30V, 100A, 115W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:115W; Transistor Case Style:TDSON; No.

Infineon Bsc011N03Lstatma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
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  • INFINEON
    • MOSFET, N-CH, 40 V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:167W; Transistor Case Style:TDSON; No.

    MOSFET, N-CH, 40 V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:167W; Transistor Case Style:TDSON; No.

    Infineon Bsc010N04Lstatma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • INFINEON
    • INTELLIGENT PWR MODULE, 1.2V, 8A, DIP; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):1.2kV; Current Rating (Ic / Id):8A; Isolation Voltage:2.5kV; IPM Case Style:DIP; IPM Series:CIPOS Maxi; Product Range:-; SVHC:No SVHC (27-Jun-2018)
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 30V, 100A, 115W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:115W; Transistor Case Style:TDSON; No.

    MOSFET, N-CH, 30V, 100A, 115W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:115W; Transistor Case Style:TDSON; No.

    Infineon Bsc011N03Lstatma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON
    • MOSFET, N-CH, 30V, 100A, 115W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:115W; Transistor Case Style:TDSON; No.

    MOSFET, N-CH, 30V, 100A, 115W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:115W; Transistor Case Style:TDSON; No.

    Infineon Bsc011N03Lstatma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • INFINEON