MOSFET, N-CH, 150V, 120A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.1V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Semiconductors - Discretes
Infineon Ipb048N15N5Lfatma1
Specifications of Infineon Ipb048N15N5Lfatma1 | |
---|---|
Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
Last Updated