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Stmicroelectronics Stm32Wb55Ccu6

About The 71V; Supply Voltage Max:3. of Pins:48Pins; Embedded Interface Type:I2C, SAI, SPI, UART, USART, USB; MCU Applications:Wireless Microcontroller; Supply Voltage Min:1

MCU, 32BIT, 64MHZ, UFQFPN-EP; Product Range:STM32 Family STM32WB Series Microcontrollers; Architecture:ARM Cortex-M4F, ARM Cortex-M0+; MCU Core Size:32bit; Program Memory Size:256KB; RAM Memory Size:128KB; CPU Speed:64MHz; No. of I/O's:30I/O's; MCU Case Style:UFQFPN-EP; No. of Pins:48Pins; Embedded Interface Type:I2C, SAI, SPI, UART, USART, USB; MCU Applications:Wireless Microcontroller; Supply Voltage Min:1.71V; Supply Voltage Max:3.6V; MCU Family:STM32; MCU Series:STM32WB; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (15-Jan-2019)

Semiconductors - ICs

Stmicroelectronics Stm32Wb55Ccu6

More from Semicondutores: Of Pins:48Pins; Embedded Interface Type:I2C, SAI, SPI, UART, USART, USB; MCU Applications:Wireless Microcontroller; Supply Voltage Min:1.71V; Supply Voltage Max:3.6V; MCU Family:STM32; MCU Series:STM32WB; Automotive Qualification Standard:-; MSL:MSL 3 - 168 Hours; SVHC:No SVHC (15-Jan-2019)
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Semiconductors - ICs

Specifications of Stmicroelectronics Stm32Wb55Ccu6

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Stmicroelectronics Stm32Wb55Ccu6
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RASPBERRY PI 4 MODEL B, 4GB; Silicon Manufacturer:Broadcom; Silicon Family Name:BCM2xxx; Core Architecture:ARM; Core Sub-Architecture:Cortex-A72; Silicon Core Number:BCM2711; Kit Contents:Raspberry Pi 4 Model B Board; Product Range:Raspberry Pi 4 Model B; SVHC:No SVHC (15-Jan-2019)
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  • RASPBERRY-PI
    • MOSFET, N-CH, 40V, 59A, 175DEG C, 38W; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:38W; Transistor Case Style:TDSON; No.

    MOSFET, N-CH, 40V, 59A, 175DEG C, 38W; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:38W; Transistor Case Style:TDSON; No.

    Infineon Bsc059N04Ls6Atma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 6 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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  • INFINEON
    • MOSFET, N-CH, 40V, 100A, 175DEG C, 79W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:79W; Transistor Case Style:TDSON; No.

    MOSFET, N-CH, 40V, 100A, 175DEG C, 79W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:79W; Transistor Case Style:TDSON; No.

    Infineon Bsc022N04Ls6Atma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 6 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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  • INFINEON
    • MOSFET, N-CH, 40V, 100A, 175DEG C, 188W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:188W; Transistor Case Style:TDSON; No.

    MOSFET, N-CH, 40V, 100A, 175DEG C, 188W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:188W; Transistor Case Style:TDSON; No.

    Infineon Bsc007N04Ls6Atma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 6 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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  • INFINEON
    • MOSFET, N-CH, 40V, 100A, 175DEG C, 188W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:188W; Transistor Case Style:TDSON; No.

    MOSFET, N-CH, 40V, 100A, 175DEG C, 188W; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00062ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power Dissipation Pd:188W; Transistor Case Style:TDSON; No.

    Infineon Bsc007N04Ls6Atma1 of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 6 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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  • INFINEON