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Nexperia Bas70-04,215

About The DIODE, SCHOTTKY, SOT-23; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):70mA; Forward Voltage VF Max:700mV; Forward Surge Current Ifsm Max:100mA; Operating Temperature Max:125°C; Diode Case Style:SOT-23; No. of Pins:3Pins; Product Range:BAS70 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Current If @ Vf:1mA; Current Ifsm:100mA; Current Ir Max:100nA; Diode Type:Schottky; Junction Temperature Tj Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Reverse Voltage Vr Max:70V; SMD Marking:74; Termination Type:Surface Mount Device

DIODE, SCHOTTKY, SOT-23; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):70mA; Forward Voltage VF Max:700mV; Forward Surge Current Ifsm Max:100mA; Operating Temperature Max:125°C; Diode Case Style:SOT-23; No. of Pins:3Pins; Product Range:BAS70 Series; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018); Current If @ Vf:1mA; Current Ifsm:100mA; Current Ir Max:100nA; Diode Type:Schottky; Junction Temperature Tj Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Reverse Voltage Vr Max:70V; SMD Marking:74; Termination Type:Surface Mount Device

Semiconductors - Discretes

Nexperia Bas70-04,215

SMD ADAPTOR, SOIC 1270/1270; Convert From:56-SOIC; Convert To:56-SOIC; Pitch Spacing:1.27mm; Row Pitch:-; Product Range:-; SVHC:No SVHC (15-Jan-2019); Board Connector / Footprint:SOIC; Board Material:Epoxy Glass Composite; Board Thickness:1.6mm; Board Type:PCB, IC to Pin out Adapter; Copper Thickness:35µm; External Height:50mm; External Length / Height:32/50mm; External Width:32mm; Hole Diameter:1mm; Material:Epoxy Fibreglass FR4; No.
DIODE, SIGNAL, SOT-23; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):215mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:4A; Operating Temperature Max:150°C; Diode Case Style:SOT-23; No.
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Specifications of Nexperia Bas70-04,215

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Nexperia Bas70-04,215
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Rating :- 8.12 /10
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TRANSISTOR, BJT, NPN, 300V, 0.1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:40hFE; Transistor Case Style:SOT-23; No.

TRANSISTOR, BJT, NPN, 300V, 0.1A, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:40hFE; Transistor Case Style:SOT-23; No.

2A; Power Dissipation Ptot Max:250mW; SMD Marking:1D; Termination Type:Surface Mount Device.Nexperia Pmbta42,215 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic @ Vce Sat:20A; Current Ic Continuous a Max:100mA; Current Ic hFE:10mA; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Current Icm:0.

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    • TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

    TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

    Nexperia Pmbta06,215 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:500mA; Current Ic hFE:10mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Current Icm:1A; Power Dissipation Ptot Max:250mW; SMD Marking:1G; Termination Type:Surface Mount Device.

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    • TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:250MHz; Power Dissipation Pd:250mW; DC Collector Current:-200mA; DC Current Gain hFE:100hFE; Transistor Case Style:TO-236AB; No.

    TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:250MHz; Power Dissipation Pd:250mW; DC Collector Current:-200mA; DC Current Gain hFE:100hFE; Transistor Case Style:TO-236AB; No.

    Nexperia Pmbt3906,215 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:200mA; Current Ic @ Vce Sat:10mA; Current Ic Continuous a Max:200mA; Current Ic hFE:1mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:80; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Current Icm:0.2A; Power Dissipation Ptot Max:250mW; SMD Marking:2A; Termination Type:Surface Mount Device.

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    • TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:250mW; DC Collector Current:-600mA; DC Current Gain hFE:100hFE; Transistor Case Style:TO-236AB; No.

    TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:250mW; DC Collector Current:-600mA; DC Current Gain hFE:100hFE; Transistor Case Style:TO-236AB; No.

    Nexperia Pmbt2907A,215 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):1.6V; Continuous Collector Current Ic Max:600mA; Current Ic @ Vce Sat:500mA; Current Ic Continuous a Max:600mA; Current Ic hFE:1mA; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Current Icm:0.8A; Power Dissipation Ptot Max:250mW; SMD Marking:2F; Termination Type:Surface Mount Device.

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    • TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:250mW; DC Collector Current:-600mA; DC Current Gain hFE:100hFE; Transistor Case Style:TO-236AB; No.

    TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:200MHz; Power Dissipation Pd:250mW; DC Collector Current:-600mA; DC Current Gain hFE:100hFE; Transistor Case Style:TO-236AB; No.

    6V; Continuous Collector Current Ic Max:600mA; Current Ic @ Vce Sat:500mA; Current Ic Continuous a Max:600mA; Current Ic hFE:1mA; Gain Bandwidth ft Typ:200MHz; Hfe Min:100; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Peak Current Icm:0.

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