MOSFET, N-CH, 100V, 40A, PG-TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:63W; Transistor Case Style:PG-TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
Semiconductors - Discretes
Infineon Bsz160N10Ns3Gatma1
Specifications of Infineon Bsz160N10Ns3Gatma1 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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