IGBT, 1.8KV, 80A, 175DEG C, 535W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:535W; Collector Emitter Voltage V(br)ceo:1.8kV; Transistor Case Style:TO-247N; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
Semiconductors - Discretes
Rohm Rgc80Tsx8Rgc11
Specifications of Rohm Rgc80Tsx8Rgc11 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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