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Nexperia Pmv28Enear

About The 4A, 0.5V; Power Dissipation Pd:660mW; Transistor Case Style:TO-263AB; No

MOSFET, AEC-Q101, N-CH, 30V, 4.4A, 0.66W; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:660mW; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

Semiconductors - Discretes

Nexperia Pmv28Enear

More from Semicondutores! Of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
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Semiconductors - Discretes

Specifications of Nexperia Pmv28Enear

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Nexperia Pmv28Enear
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MOSFET, N-CH, 20V, 0.6A, 0.36W; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.47ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:360mW; Transistor Case Style:DFN1006; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • NEXPERIA
    • MOSFET, AEC-Q101, N-CH, 30V, 3.2A, 0.63W; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:630mW; Transistor Case Style:TO-263AB; No.
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  • Semicondutores
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  • NEXPERIA
    • MOSFET, N CH, 40V, 325A, 375W, LFPAK88; Transistor Polarity:N Channel; Continuous Drain Current Id:325A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00088ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; No.

    MOSFET, N CH, 40V, 325A, 375W, LFPAK88; Transistor Polarity:N Channel; Continuous Drain Current Id:325A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00088ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:375W; No.

    Nexperia Psmn1R0-40Sshj of Pins:4Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AEC-Q101, N-CH, 30V, 3.2A, 0.63W; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:630mW; Transistor Case Style:TO-263AB; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • MOSFET, AEC-Q101, N-CH, 30V, 3.2A, 0.63W; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.052ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:630mW; Transistor Case Style:TO-263AB; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA