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Stmicroelectronics T435T-600Fp

About The of Pins:3Pins; Operating Temperature Max:125°C; Product Range:Snubberless T Series; SVHC:No SVHC (15-Jan-2019).TRIAC, 4A, 600V, TO-220FPAB; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):4A; Triac Case Style:TO-220FPAB; Gate Trigger Current Max (QI), Igt:35mA; Gate Trigger Voltage Max Vgt:1

TRIAC, 4A, 600V, TO-220FPAB; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):4A; Triac Case Style:TO-220FPAB; Gate Trigger Current Max (QI), Igt:35mA; Gate Trigger Voltage Max Vgt:1.3V; Peak Gate Power:-; Peak Non Rep Surge Current Itsm 50Hz:30A; Holding Current Max Ih:35mA; No. of Pins:3Pins; Operating Temperature Max:125°C; Product Range:Snubberless T Series; SVHC:No SVHC (15-Jan-2019)

Semiconductors - Discretes

Stmicroelectronics T435T-600Fp

Semiconductors - Discretes

Specifications of Stmicroelectronics T435T-600Fp

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Stmicroelectronics T435T-600Fp
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Votes :- 53
MOSFET, N-CH, 600V, 29A, 150DEG C, 190W; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.; Available until stocks are exhausted Alternative available
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    • IGBT, 650V, 80A, 175DEG C, 283W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No.

    IGBT, 650V, 80A, 175DEG C, 283W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No.

    Stmicroelectronics Stgwt40Hp65Fb of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019).

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    • IGBT, 600V, 80A, 175DEG C, 283W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.

    IGBT, 600V, 80A, 175DEG C, 283W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.

    Stmicroelectronics Stgw40H60Dlfb of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019).

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    • IGBT, 600V, 30A, 175DEG C, 30W; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:30W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No.

    IGBT, 600V, 30A, 175DEG C, 30W; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:30W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No.

    Stmicroelectronics Stgf15H60Df of Pins:3Pins; Operating Temperature Max:175°C; Product Range:H Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019).

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    • IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:83W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:83W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    Stmicroelectronics Stgd5H60Df of Pins:3Pins; Operating Temperature Max:175°C; Product Range:H Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • TRANS, NPN, 250V, 1A, 150DEG C, 15W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:10MHz; Power Dissipation Pd:15W; DC Collector Current:1A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    TRANS, NPN, 250V, 1A, 150DEG C, 15W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:10MHz; Power Dissipation Pd:15W; DC Collector Current:1A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    Stmicroelectronics Mjd47T4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

  • Eletrônicos
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  • STMICROELECTRONICS
    • TRIAC, 4A, 600V, TO-220FPAB; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):4A; Triac Case Style:TO-220FPAB; Gate Trigger Current Max (QI), Igt:35mA; Gate Trigger Voltage Max Vgt:1.3V; Peak Gate Power:-; Peak Non Rep Surge Current Itsm 50Hz:30A; Holding Current Max Ih:35mA; No.
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    • TRIAC, 4A, 700V, TO-252; Peak Repetitive Off-State Voltage, Vdrm:700V; On State RMS Current IT(rms):4A; Triac Case Style:TO-252; Gate Trigger Current Max (QI), Igt:5mA; Gate Trigger Voltage Max Vgt:1.3V; Peak Gate Power:-; Peak Non Rep Surge Current Itsm 50Hz:30A; Holding Current Max Ih:10mA; No.
  • Eletrônicos
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  • Semicondutores
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  • STMICROELECTRONICS
    • TRIAC, 4A, 600V, TO-220FPAB; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current IT(rms):4A; Triac Case Style:TO-220FPAB; Gate Trigger Current Max (QI), Igt:35mA; Gate Trigger Voltage Max Vgt:1.3V; Peak Gate Power:-; Peak Non Rep Surge Current Itsm 50Hz:30A; Holding Current Max Ih:35mA; No.
  • Eletrônicos
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    • TRIAC, 4A, 700V, TO-252; Peak Repetitive Off-State Voltage, Vdrm:700V; On State RMS Current IT(rms):4A; Triac Case Style:TO-252; Gate Trigger Current Max (QI), Igt:5mA; Gate Trigger Voltage Max Vgt:1.3V; Peak Gate Power:-; Peak Non Rep Surge Current Itsm 50Hz:30A; Holding Current Max Ih:10mA; No.
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