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Stmicroelectronics Stgwt40Hp65Fb

About The IGBT, 650V, 80A, 175DEG C, 283W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No

IGBT, 650V, 80A, 175DEG C, 283W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)

Semiconductors - Discretes

Stmicroelectronics Stgwt40Hp65Fb

Semiconductors - Discretes

Specifications of Stmicroelectronics Stgwt40Hp65Fb

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Stmicroelectronics Stgwt40Hp65Fb
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Rating :- 9.99 /10
Votes :- 51
MOSFET, N-CH, 600V, 11A, 150DEG C, 110W; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.31ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:110W; Transistor Case Style:TO-252; No.

MOSFET, N-CH, 600V, 11A, 150DEG C, 110W; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.31ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:110W; Transistor Case Style:TO-252; No.

Stmicroelectronics Std13N60Dm2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh DM2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, N-CH, 80V, 80A, 175DEG C, 167W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:167W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 80V, 80A, 175DEG C, 167W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:167W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std110N8F6 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STripFET F6 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, AEC-Q101, N-CH, 100V, 80A, 120W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:120W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, N-CH, 100V, 80A, 120W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:120W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std105N10F7Ag of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STripFET F7 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:83W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current:10A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:83W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No.

    Stmicroelectronics Stgd5H60Df of Pins:3Pins; Operating Temperature Max:175°C; Product Range:H Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • TRANS, NPN, 250V, 1A, 150DEG C, 15W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:10MHz; Power Dissipation Pd:15W; DC Collector Current:1A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    TRANS, NPN, 250V, 1A, 150DEG C, 15W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:10MHz; Power Dissipation Pd:15W; DC Collector Current:1A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No.

    Stmicroelectronics Mjd47T4 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, AEC-Q101, N-CH, 55V, 80A, 300W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No.

    MOSFET, AEC-Q101, N-CH, 55V, 80A, 300W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No.

    Stmicroelectronics Stb80Nf55-08Ag of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STripFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, N-CH, 600V, 29A, 150DEG C, 190W; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.; Available until stocks are exhausted Alternative available
  • Eletrônicos
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    • IGBT, 650V, 80A, 175DEG C, 283W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No.

    IGBT, 650V, 80A, 175DEG C, 283W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No.

    Stmicroelectronics Stgwt40Hp65Fb of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019).

  • Eletrônicos
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  • STMICROELECTRONICS
    • MOSFET, N-CH, 600V, 29A, 150DEG C, 190W; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.; Available until stocks are exhausted Alternative available
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • STMICROELECTRONICS
    • IGBT, 650V, 80A, 175DEG C, 283W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No.

    IGBT, 650V, 80A, 175DEG C, 283W; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:283W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-3P; No.

    Stmicroelectronics Stgwt40Hp65Fb of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019).

  • Eletrônicos
  • Componentes e placas de circuitos
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  • STMICROELECTRONICS