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Stmicroelectronics Std9N60M2

About The MOSFET, N-CH, 600V, 5.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No

MOSFET, N-CH, 600V, 5.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh M2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

Semiconductors - Discretes

Stmicroelectronics Std9N60M2

More from STMICROELECTRONICS? MOSFET, N-CH, 600V, 5.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.
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Semiconductors - Discretes

Specifications of Stmicroelectronics Std9N60M2

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Stmicroelectronics Std9N60M2
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Rating :- 8.05 /10
Votes :- 51
MOSFET, N-CH, 40V, 80A, 175DEG C, 70W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

MOSFET, N-CH, 40V, 80A, 175DEG C, 70W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

Stmicroelectronics Std80N4F6 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STripFET VI DeepGATE Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, N-CH, 600V, 3.5A, 150DEG C, 45W; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 600V, 3.5A, 150DEG C, 45W; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std5N60Dm2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh DM2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, N-CH, 800V, 2.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 800V, 2.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std3N80K5 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh K5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, N-CH, 100V, 32A, 175DEG C, 50W; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0; Available until stocks are exhausted Alternative available
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    • MOSFET, AEC-Q101, N-CH, 250V, 17A, 110W; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:110W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, N-CH, 250V, 17A, 110W; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:110W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std18Nf25 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STripFET II Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, AEC-Q101, N-CH, 500V, 10A, 85W; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.336ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:85W; Transistor Case Style:TO-252; No.

    MOSFET, AEC-Q101, N-CH, 500V, 10A, 85W; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.336ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:85W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std15N50M2Ag of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh M2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, N-CH, 600V, 5.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 600V, 5.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std9N60M2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh M2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, N-CH, 40V, 80A, 175DEG C, 70W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 40V, 80A, 175DEG C, 70W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std80N4F6 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STripFET VI DeepGATE Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

  • Eletrônicos
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  • STMICROELECTRONICS
    • MOSFET, N-CH, 600V, 5.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 600V, 5.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std9N60M2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh M2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

  • Eletrônicos
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  • STMICROELECTRONICS
    • MOSFET, N-CH, 40V, 80A, 175DEG C, 70W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 40V, 80A, 175DEG C, 70W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std80N4F6 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STripFET VI DeepGATE Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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