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Stmicroelectronics Std30N10F7

About The 0; Available until stocks are exhausted Alternative available.MOSFET, N-CH, 100V, 32A, 175DEG C, 50W; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0

MOSFET, N-CH, 100V, 32A, 175DEG C, 50W; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0; Available until stocks are exhausted Alternative available

Semiconductors - Discretes

Stmicroelectronics Std30N10F7

Semiconductors - Discretes

Specifications of Stmicroelectronics Std30N10F7

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Stmicroelectronics Std30N10F7
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MOSFET, N-CH, 650V, 10A, 150DEG C, 25W; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25W; Transistor Case Style:TO-220FP; No.
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    • MOSFET, N-CH, 650V, 8A, 150DEG C, 25W; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.42ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:25W; Transistor Case Style:TO-220FP; No.
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    • MOSFET, P-CH, -60V, -10A, 175DEG C, 20W; Transistor Polarity:P Channel; Continuous Drain Current Id:-10A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:20W; Transistor Case Style:TO-220FP; No.
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    • MOSFET, N-CH, 600V, 5.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 600V, 5.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std9N60M2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh M2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, N-CH, 40V, 80A, 175DEG C, 70W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 40V, 80A, 175DEG C, 70W; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:70W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std80N4F6 of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STripFET VI DeepGATE Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, N-CH, 600V, 3.5A, 150DEG C, 45W; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 600V, 3.5A, 150DEG C, 45W; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std5N60Dm2 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh DM2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, N-CH, 800V, 2.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 800V, 2.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std3N80K5 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh K5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

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    • MOSFET, N-CH, 100V, 32A, 175DEG C, 50W; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0; Available until stocks are exhausted Alternative available
  • Eletrônicos
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  • STMICROELECTRONICS
    • MOSFET, N-CH, 800V, 2.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    MOSFET, N-CH, 800V, 2.5A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No.

    Stmicroelectronics Std3N80K5 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh K5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019).

  • Eletrônicos
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  • STMICROELECTRONICS
    • MOSFET, N-CH, 100V, 32A, 175DEG C, 50W; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0; Available until stocks are exhausted Alternative available
  • Eletrônicos
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  • STMICROELECTRONICS