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Vishay

Vishay Si2308Bds-T1-Ge3

About The 3A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.

N Channel Mosfet, 60V, 2.3A, To-236, Full Reel; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.13Ohm; Rds(On) Test Voltage Vgs:20V ,VISHAY SI2308BDS-T1-GE3.

Semiconduttori - Discreti

Vishay Si2308Bds-T1-Ge3

Semiconduttori - Discreti

Specifications of Vishay Si2308Bds-T1-Ge3

CategoryDispositivi elettronici > Circuiti stampati e componenti > Semiconduttori > Transistor
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Vishay Si2308Bds-T1-Ge3
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Res, Thick Film, 4R7, 1%, 0.1W, 0603, Reel; Resistance:4.7Ohm; Resistance Tolerance:± 1%; Power Rating:100Mw; Resistor Case Style:0603 ^1608 Metric]; Resistor Technology:Thick Film; Resistor Type:Genera |VISHAY TNPW06031K00BEEN-DEL
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    • P Channel Mosfet, -60V, 11A, To-263, Full Reel; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0055Ohm; Transistor Mounting:Surfac |VISHAY SUM110P06-07L-E3.
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    • P Channel Mosfet, -12V, 4.1A To-236, Full Reel; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.1A; On Resistance Rds(On):0.032Ohm; Transistor Mounting:Surface |VISHAY SI2333DS-T1-E3
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    • P Channel Mosfet, -12V, 4.1A To-236, Full Reel; Transistor Polarity:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.1A; On Resistance Rds(On):0.032Ohm; Transistor Mounting:Surface |VISHAY SI2333DS-T1-E3
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