P Channel Mosfet; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-20V; On Resistance Rds(On):18Mohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-500 ,VISHAY SIA433EDJ-T1-GE3.
Semiconduttori - Discreti
Vishay Sia433Edj-T1-Ge3
Specifications of Vishay Sia433Edj-T1-Ge3 | |
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Category | Dispositivi elettronici > Circuiti stampati e componenti > Semiconduttori > Diodi |
Instock | instock |
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