Infineon FF600R12KE4BOSA1 Igbt Module, N-Ch, 1.2Kv, 600A

Name: IGBT MODULE, N-CH, 1.2KV, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Emitter Saturation Voltage Vce(on):1.75V; Power | Infineon
Brand: Infineon
SKU: CBFZ-418794
Price: 410.77 AUD
Availability: InStock

About The 75V; Power.2KV, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Emitter Saturation Voltage Vce(on):1

IGBT MODULE, N-CH, 1.2KV, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Emitter Saturation Voltage Vce(on):1.75V; Power

Infineon

POWER LOAD SW, AEC-Q100, 42V, TO-252-3; Power Load Switch Type:Low Side; Input Voltage:42V; Current Limit:-; On State Resistance:0.028ohm;

IGBT MODULE, N-CH, 1.2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power

Infineon

Specifications of Infineon FF600R12KE4BOSA1 Igbt Module, N-Ch, 1.2Kv, 600A
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Last Updated June 12th, 2024 12:17 pm

Infineon FF600R12KE4BOSA1 Igbt Module, N-Ch, 1.2Kv, 600A

More Varieties

Rating :- 9.88 /10

Votes :- 53

MOSFET, N-CH, 150V, 114A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Source Voltage Vds:150V; On Resistance

Infineon IPB073N15N5ATMA1 Mosfet, N-Ch, 150V, 114A, To-263-3.

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MOSFET, N-CH, 150V, 120A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Source Voltage Vds:150V; On Resistance

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MOSFET, N-CH, 150V, 56A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Source Voltage Vds:150V; On Resistance

Infineon BSC160N15NS5ATMA1 Mosfet, N-Ch, 150V, 56A, Tdson-8.

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POWER LOAD SW, AEC-Q100, 42V, TO-252-3; Power Load Switch Type:Low Side; Input Voltage:42V; Current Limit:-; On State Resistance:0.028ohm;

Infineon BTS3142DATMA1 Power Load Sw, Aec-Q100, 42V, To-252-3.

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MOSFET, N-CH, 150V, 174A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Source Voltage Vds:150V; On Resistance

Infineon IPB044N15N5ATMA1 Mosfet, N-Ch, 150V, 174A, To-263-7.

Infineon

MOSFET, N-CH, 150V, 174A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Source Voltage Vds:150V; On Resistance

Infineon IPB044N15N5ATMA1 Mosfet, N-Ch, 150V, 174A, To-263-7.

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IGBT MODULE, N-CH, 1.2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power

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IGBT MODULE, N-CH, 1.2KV, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Emitter Saturation Voltage Vce(on):1.75V; Power

2Kv, 600A.Infineon FF600R12KE4BOSA1 Igbt Module, N-Ch, 1.

Infineon

IGBT MODULE, N-CH, 1.2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power

Infineon FS150R12KT4B9BOSA1 Igbt Module, N-Ch, 1.

Infineon

IGBT MODULE, N-CH, 1.2KV, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Emitter Saturation Voltage Vce(on):1.75V; Power

Infineon FF600R12KE4BOSA1 Igbt Module, N-Ch, 1.2Kv, 600A.

Infineon

Infineon FF600R12KE4BOSA1 Igbt Module, N-Ch, 1.2Kv, 600A

About The 75V; Power.2KV, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Emitter Saturation Voltage Vce(on):1

Infineon

Specifications of Infineon FF600R12KE4BOSA1 Igbt Module, N-Ch, 1.2Kv, 600A

MOSFET, N-CH, 150V, 114A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Source Voltage Vds:150V; On Resistance

MOSFET, N-CH, 150V, 120A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Source Voltage Vds:150V; On Resistance

MOSFET, N-CH, 150V, 56A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Source Voltage Vds:150V; On Resistance

POWER LOAD SW, AEC-Q100, 42V, TO-252-3; Power Load Switch Type:Low Side; Input Voltage:42V; Current Limit:-; On State Resistance:0.028ohm;

MOSFET, N-CH, 150V, 174A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Source Voltage Vds:150V; On Resistance

MOSFET, N-CH, 150V, 174A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Source Voltage Vds:150V; On Resistance

IGBT MODULE, N-CH, 1.2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power

IGBT MODULE, N-CH, 1.2KV, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Emitter Saturation Voltage Vce(on):1.75V; Power

IGBT MODULE, N-CH, 1.2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power

IGBT MODULE, N-CH, 1.2KV, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Emitter Saturation Voltage Vce(on):1.75V; Power