Infineon FS150R12KT4B9BOSA1 Igbt Module, N-Ch, 1.2Kv, 150A

Name: IGBT MODULE, N-CH, 1.2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power | Infineon
Brand: Infineon
SKU: CBFZ-418795
Price: 401.68 AUD
Availability: InStock

About The 2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power

IGBT MODULE, N-CH, 1.2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power

Infineon

IGBT MODULE, N-CH, 1.2KV, 600A; Transistor Polarity:N Channel; DC Collector Current:600A; Emitter Saturation Voltage Vce(on):1.75V; Power

MOSFET, N-CH, 150V, 174A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Source Voltage Vds:150V; On Resistance

Infineon

Specifications of Infineon FS150R12KT4B9BOSA1 Igbt Module, N-Ch, 1.2Kv, 150A
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Last Updated June 14th, 2024 01:37 pm

Infineon FS150R12KT4B9BOSA1 Igbt Module, N-Ch, 1.2Kv, 150A

More Varieties

Rating :- 9.86 /10

Votes :- 54

MOSFET, AUTO, N-CH, 150V, 114A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:40V; On Resistance

Infineon IPC100N04S51R2ATMA1 Mosfet, Auto, N-Ch, 150V, 114A, Tdson.

Infineon

MOSFET, N-CH, 150V, 114A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Source Voltage Vds:150V; On Resistance

Infineon IPB073N15N5ATMA1 Mosfet, N-Ch, 150V, 114A, To-263-3.

Infineon

MOSFET, N-CH, 150V, 120A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Source Voltage Vds:150V; On Resistance

Infineon IPB048N15N5ATMA1 Mosfet, N-Ch, 150V, 120A, To-263-3.

Infineon

MOSFET, N-CH, 150V, 56A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Source Voltage Vds:150V; On Resistance

Infineon BSC160N15NS5ATMA1 Mosfet, N-Ch, 150V, 56A, Tdson-8.

Infineon

POWER LOAD SW, AEC-Q100, 42V, TO-252-3; Power Load Switch Type:Low Side; Input Voltage:42V; Current Limit:-; On State Resistance:0.028ohm;

Infineon BTS3142DATMA1 Power Load Sw, Aec-Q100, 42V, To-252-3.

Infineon

MOSFET, N-CH, 150V, 174A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Source Voltage Vds:150V; On Resistance

Infineon IPB044N15N5ATMA1 Mosfet, N-Ch, 150V, 174A, To-263-7.

Infineon

MOSFET, N-CH, 150V, 174A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Source Voltage Vds:150V; On Resistance

Infineon IPB044N15N5ATMA1 Mosfet, N-Ch, 150V, 174A, To-263-7.

Infineon

IGBT MODULE, N-CH, 1.2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power

Infineon FS150R12KT4B9BOSA1 Igbt Module, N-Ch, 1.2Kv, 150A.

Infineon

MOSFET, N-CH, 150V, 174A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Source Voltage Vds:150V; On Resistance

Infineon IPB044N15N5ATMA1 Mosfet, N-Ch, 150V, 174A, To-263-7.

Infineon

IGBT MODULE, N-CH, 1.2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power

2Kv, 150A.Infineon FS150R12KT4B9BOSA1 Igbt Module, N-Ch, 1.

Infineon

Infineon FS150R12KT4B9BOSA1 Igbt Module, N-Ch, 1.2Kv, 150A

About The 2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power

Infineon

Specifications of Infineon FS150R12KT4B9BOSA1 Igbt Module, N-Ch, 1.2Kv, 150A

MOSFET, AUTO, N-CH, 150V, 114A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:40V; On Resistance

MOSFET, N-CH, 150V, 114A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Source Voltage Vds:150V; On Resistance

MOSFET, N-CH, 150V, 120A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Source Voltage Vds:150V; On Resistance

MOSFET, N-CH, 150V, 56A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Source Voltage Vds:150V; On Resistance

POWER LOAD SW, AEC-Q100, 42V, TO-252-3; Power Load Switch Type:Low Side; Input Voltage:42V; Current Limit:-; On State Resistance:0.028ohm;

MOSFET, N-CH, 150V, 174A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Source Voltage Vds:150V; On Resistance

MOSFET, N-CH, 150V, 174A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Source Voltage Vds:150V; On Resistance

IGBT MODULE, N-CH, 1.2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power

MOSFET, N-CH, 150V, 174A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:174A; Source Voltage Vds:150V; On Resistance

IGBT MODULE, N-CH, 1.2KV, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Emitter Saturation Voltage Vce(on):1.75V; Power