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Stmicroelectronics Stl8N10F7 Mosfet, N-Ch, 100V, 8A, Powerflat

About The 5V; Power Dissipation Pd:50W; Transistor Case Style:PowerFLAT; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)

MOSFET, N-CH, 100V, 8A, POWERFLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:50W; Transistor Case Style:PowerFLAT; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)

Stmicroelectronics

Stmicroelectronics Stl8N10F7 Mosfet, N-Ch, 100V, 8A, Powerflat

More from Stmicroelectronics, MOSFET, N-CH, 100V, 8A, POWERFLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:50W; Transistor Case Style:PowerFLAT; No.
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Stmicroelectronics

Specifications of Stmicroelectronics Stl8N10F7 Mosfet, N-Ch, 100V, 8A, Powerflat

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Stmicroelectronics Stl8N10F7 Mosfet, N-Ch, 100V, 8A, Powerflat
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Rating :- 9.73 /10
Votes :- 51
MOSFET MODULE, N-CH, 100V, 360A; Transistor Polarity:N Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:100V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:830W; Operating Temperature Max:175°C; Product Range:Trench HiperFET Series; SVHC:No SVHC (07-Jul-2017)
  • Ixys Semiconductor
  • Ixys Semiconductor
    • DIODE, ESD PROTECTION, 3.3V, 0201; Clamping Voltage Vc Max:7V; Diode Case Style:0201; No.

    DIODE, ESD PROTECTION, 3.3V, 0201; Clamping Voltage Vc Max:7V; Diode Case Style:0201; No.

    3V, 0201 of Pins:2Pins; Operating Voltage:-; Power Dissipation Pd:-; Product Range:-; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018).Infineon Esd241B1W0201E6327Xtsa1 Diode, Esd Protection, 3.

  • Infineon
  • Infineon
    • DIODE, ESD PROTECTION, 5.5V, 0201; Clamping Voltage Vc Max:13V; Diode Case Style:0201; No.

    DIODE, ESD PROTECTION, 5.5V, 0201; Clamping Voltage Vc Max:13V; Diode Case Style:0201; No.

    Infineon Esd131B1W0201E6327Xtsa1 Diode, Esd Protection, 5.5V, 0201 of Pins:2Pins; Operating Voltage:-; Power Dissipation Pd:-; Product Range:-; Automotive Qualification Standard:-; SVHC:No SVHC (27-Jun-2018).

  • Infineon
  • Infineon
    • D-SUB HEX LOCKING SCREW, 4-40; Product Range:-; Screw Length:15.7mm; Thread Size - Metric:-; Thread Size - Imperial:4-40 UNC-2A; SVHC:No SVHC (07-Jul-2017)
  • Multicomp
  • Multicomp
    • D-SUB SCREWLOCK, 19.3MM, 4-40UNC, PK1000; Product Range:-; Screw Length:19.3mm; Thread Size - Metric:-; Thread Size - Imperial:4-40 UNC; Connector Shell Size:-; SVHC:No SVHC (07-Jul-2017)
  • Multicomp
  • Multicomp
    • WIRE CUTTER, FLUSH, 1MM, 144MM; Cutter Type:Precision; Overall Length:144mm; Cut Type:Flush; Cutting Capacity Max:1mm; Cutting Edge Hardness:-; Product Range:-; SVHC:No SVHC (07-Jul-2017)
  • Multicomp Pro
  • Multicomp Pro
    • MOSFET, N-CH, 100V, 8A, POWERFLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:50W; Transistor Case Style:PowerFLAT; No.

    MOSFET, N-CH, 100V, 8A, POWERFLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:50W; Transistor Case Style:PowerFLAT; No.

    Stmicroelectronics Stl8N10F7 Mosfet, N-Ch, 100V, 8A, Powerflat of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017).

  • Stmicroelectronics
  • Stmicroelectronics
    • MOSFET, N-CH, 600V, 20A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:170W; Transistor Case Style:TO-247; No.

    MOSFET, N-CH, 600V, 20A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:170W; Transistor Case Style:TO-247; No.

    Stmicroelectronics Stw27N60M2-Ep Mosfet, N-Ch, 600V, 20A, To-247 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh, M2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017).

  • Stmicroelectronics
  • Stmicroelectronics
    • MOSFET, N-CH, 100V, 8A, POWERFLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:50W; Transistor Case Style:PowerFLAT; No.

    MOSFET, N-CH, 100V, 8A, POWERFLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:50W; Transistor Case Style:PowerFLAT; No.

    Stmicroelectronics Stl8N10F7 Mosfet, N-Ch, 100V, 8A, Powerflat of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017).

  • Stmicroelectronics
  • Stmicroelectronics
    • MOSFET, N-CH, 600V, 20A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:170W; Transistor Case Style:TO-247; No.

    MOSFET, N-CH, 600V, 20A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:170W; Transistor Case Style:TO-247; No.

    Stmicroelectronics Stw27N60M2-Ep Mosfet, N-Ch, 600V, 20A, To-247 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MDmesh, M2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017).

  • Stmicroelectronics
  • Stmicroelectronics