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Ixys Semiconductor

Ixys Semiconductor Ixfn360N10T Mosfet Module, N-Ch, 100V, 360A

About The 5V; Power Dissipation Pd:830W; Operating Temperature Max:175°C; Product Range:Trench HiperFET Series; SVHC:No SVHC (07-Jul-2017).0026ohm; Rds(on) Test Voltage Vgs:100V; Threshold Voltage Vgs:4

MOSFET MODULE, N-CH, 100V, 360A; Transistor Polarity:N Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:100V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:830W; Operating Temperature Max:175°C; Product Range:Trench HiperFET Series; SVHC:No SVHC (07-Jul-2017)

Ixys Semiconductor

Ixys Semiconductor Ixfn360N10T Mosfet Module, N-Ch, 100V, 360A

Ixys Semiconductor

Specifications of Ixys Semiconductor Ixfn360N10T Mosfet Module, N-Ch, 100V, 360A

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Instockinstock

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Ixys Semiconductor Ixfn360N10T Mosfet Module, N-Ch, 100V, 360A
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