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Nexperia Bf722,115

About The 05A SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:60MHz; Power Dissipation Pd:1.TRANS NPN 250V 0

TRANS NPN 250V 0.05A SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:60MHz; Power Dissipation Pd:1.2W; DC Collector Current:100mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):600mV; Current Ic Continuous a Max:30mA; Gain Bandwidth ft Typ:60MHz; Hfe Min:50; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar

Semiconductors - Discretes

Nexperia Bf722,115

Semiconductors - Discretes

Specifications of Nexperia Bf722,115

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Nexperia Bf722,115
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Rating :- 8.15 /10
Votes :- 54
TRANS PNP 60V 1A SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:100MHz; Power Dissipation Pd:1.3W; DC Collector Current:-1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No.

TRANS PNP 60V 1A SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:100MHz; Power Dissipation Pd:1.3W; DC Collector Current:-1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No.

Nexperia Bsp31,115 of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-250mV; Current Ic Continuous a Max:-150mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANS PNP 250V 0.05A SOT223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-250V; Transition Frequency ft:60MHz; Power Dissipation Pd:1.2W; DC Collector Current:-100mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    TRANS PNP 250V 0.05A SOT223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-250V; Transition Frequency ft:60MHz; Power Dissipation Pd:1.2W; DC Collector Current:-100mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    Nexperia Bf723,115 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-600mV; Current Ic Continuous a Max:-30mA; Gain Bandwidth ft Typ:60MHz; Hfe Min:50; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANS NPN 60V 1A SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:1.3W; DC Collector Current:1A; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-223; No.

    TRANS NPN 60V 1A SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:1.3W; DC Collector Current:1A; DC Current Gain hFE:30hFE; Transistor Case Style:SOT-223; No.

    Nexperia Bsp43,115 of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Current Ic Continuous a Max:150mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANS NPN 60V 1A SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:100MHz; Power Dissipation Pd:1.3W; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No.

    TRANS NPN 60V 1A SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:100MHz; Power Dissipation Pd:1.3W; DC Collector Current:1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No.

    Nexperia Bsp41,115 of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Current Ic Continuous a Max:150mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANS PNP 60V 1A SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:100MHz; Power Dissipation Pd:1.3W; DC Collector Current:-1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No.

    TRANS PNP 60V 1A SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:100MHz; Power Dissipation Pd:1.3W; DC Collector Current:-1A; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-223; No.

    Nexperia Bsp31,115 of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-250mV; Current Ic Continuous a Max:-150mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANS NPN 350V 0.05A SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:70MHz; Power Dissipation Pd:1.2W; DC Collector Current:100mA; DC Current Gain hFE:40hFE; Transistor Case Style:SOT-223; No.

    TRANS NPN 350V 0.05A SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:70MHz; Power Dissipation Pd:1.2W; DC Collector Current:100mA; DC Current Gain hFE:40hFE; Transistor Case Style:SOT-223; No.

    Nexperia Bsp19,115 of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):500mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:70MHz; Hfe Min:40; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANS PNP 250V 0.05A SOT223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-250V; Transition Frequency ft:60MHz; Power Dissipation Pd:1.2W; DC Collector Current:-100mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    TRANS PNP 250V 0.05A SOT223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-250V; Transition Frequency ft:60MHz; Power Dissipation Pd:1.2W; DC Collector Current:-100mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    Nexperia Bf723,115 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-600mV; Current Ic Continuous a Max:-30mA; Gain Bandwidth ft Typ:60MHz; Hfe Min:50; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANS NPN 250V 0.05A SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:60MHz; Power Dissipation Pd:1.2W; DC Collector Current:100mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    TRANS NPN 250V 0.05A SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:60MHz; Power Dissipation Pd:1.2W; DC Collector Current:100mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    Nexperia Bf722,115 of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):600mV; Current Ic Continuous a Max:30mA; Gain Bandwidth ft Typ:60MHz; Hfe Min:50; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANS PNP 250V 0.05A SOT223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-250V; Transition Frequency ft:60MHz; Power Dissipation Pd:1.2W; DC Collector Current:-100mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    TRANS PNP 250V 0.05A SOT223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-250V; Transition Frequency ft:60MHz; Power Dissipation Pd:1.2W; DC Collector Current:-100mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    Nexperia Bf723,115 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-600mV; Current Ic Continuous a Max:-30mA; Gain Bandwidth ft Typ:60MHz; Hfe Min:50; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA
    • TRANS NPN 250V 0.05A SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:60MHz; Power Dissipation Pd:1.2W; DC Collector Current:100mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    TRANS NPN 250V 0.05A SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:250V; Transition Frequency ft:60MHz; Power Dissipation Pd:1.2W; DC Collector Current:100mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-223; No.

    Nexperia Bf722,115 of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):600mV; Current Ic Continuous a Max:30mA; Gain Bandwidth ft Typ:60MHz; Hfe Min:50; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • NEXPERIA