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Nexperia Bst62,115

About The TRANSISTOR DARL PNP SOT89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:200MHz; Power Dissipation Pd:1.3W; DC Collector Current:-1A; DC Current Gain hFE:2000hFE; Transistor Case Style:SOT-89; No

TRANSISTOR DARL PNP SOT89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:200MHz; Power Dissipation Pd:1.3W; DC Collector Current:-1A; DC Current Gain hFE:2000hFE; Transistor Case Style:SOT-89; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):-1.3V; Current Ic Continuous a Max:-500mA; Gain Bandwidth ft Typ:200MHz; Hfe Min:2000; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Termination Type:Surface Mount Device; Transistor Type:Darlington

Semiconductors - Discretes

Nexperia Bst62,115

Semiconductors - Discretes

Specifications of Nexperia Bst62,115

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Nexperia Bst62,115
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