MOSFET,PWR,FAST BODY DIODE TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.088ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:208W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:EF Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
Semiconductors - Discretes
Vishay Sihp105N60Ef-Ge3
Specifications of Vishay Sihp105N60Ef-Ge3 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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