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Vishay Si9933Cdy-T1-Ge3

About The 5V; Threshold Voltage Vgs:-1.4V; Power Dissipation Pd:3

MOSFET, PP-CH, 20V, 4A, SO8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.4V; Power Dissipation Pd:3.1W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Continuous Drain Current Id, P Channel:-4A; Current Id Max:-4A; Drain Source Voltage Vds, P Channel:-20V; Module Configuration:Dual; On Resistance Rds(on), P Channel:0.058ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:12V

Semiconductors - Discretes

Vishay Si9933Cdy-T1-Ge3

Semiconductors - Discretes

Specifications of Vishay Si9933Cdy-T1-Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Si9933Cdy-T1-Ge3
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