Vishay Si4925Ddy-T1-Ge3
About The MOSFET, PP-CH, 30V, 8A, SO8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No
MOSFET, PP-CH, 30V, 8A, SO8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Continuous Drain Current Id, P Channel:-8A; Current Id Max:-8A; Drain Source Voltage Vds, P Channel:-30V; Module Configuration:Dual; On Resistance Rds(on), P Channel:0.029ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V
Semiconductors - Discretes
Vishay Si4925Ddy-T1-Ge3
Semiconductors - Discretes
Specifications of Vishay Si4925Ddy-T1-Ge3 | |
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| Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
| Instock | instock |
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