TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:270MHz; Power Dissipation Pd:330mW; DC Collector Current:200mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. of Transistors:1; Noise Factor Typ:5dB; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:200mA; SMD Marking:1A; Termination Type:Surface Mount Device; Voltage Vcbo:60V of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Continuous Collector Current Ic Max:200mA; Current Gain Hfe Max:300; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:SMBT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:270MHz; Hfe Min:100; No.
Semiconductors - Discretes
Infineon Smbt3904E6327Htsa1
Specifications of Infineon Smbt3904E6327Htsa1 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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