of Transistors:1; On State Resistance @ Vgs = 4.17A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-170mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:360mW; Transistor Case Style:SOT-23; No.5V:12ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:680mA; Rate of Voltage Change dv / dt:6kV/µs; Repetitive Avalanche Energy Max:0.
of Transistors:1; Noise Factor Typ:4dB; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:1P; Termination Type:Surface Mount Device; Voltage Vcbo:75V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Infineon Smbt2222Ae6327Htsa1.
Infineon Spb20N60C3Atma1.1A; SMD Marking:20N60C3; Termination Type:Surface Mount Device; Voltage Vds Typ:650V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:62.
of Transistors:1; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:200MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Noise Factor Typ:5dB; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:200mA; SMD Marking:1A; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:270MHz; Power Dissipation Pd:330mW; DC Collector Current:200mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Infineon Smbt3904E6327Htsa1.
Infineon Bfr92Pe6327Htsa1.of Transistors:1; Noise Figure Typ:1.4dB; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:280mW; SMD Marking:GF; Termination Type:Surface Mount Device; Test Frequency:900MHz; Transistor Case Style:SOT-23; Voltage Vcbo:20V RF TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:5GHz; Power Dissipation Pd:280mW; DC Collector Current:45mA; DC Current Gain hFE:100hFE; RF Transistor Case:SOT-23; No.
5dB; Power @ 1dB Gain Compression, P1dB:10dBm; Power Dissipation Ptot Max:280mW; SMD Marking:MC; Termination Type:Surface Mount Device; Test Frequency:800MHz; Transistor Case Style:SOT-23 RF TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:2.5GHz; Power Dissipation Pd:280mW; DC Collector Current:25mA; DC Current Gain hFE:70hFE; RF Transistor Case:SOT-23; No. Infineon Bfs17Pe6327Htsa1.
5V:12ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:680mA; Rate of Voltage Change dv / dt:6kV/µs; Repetitive Avalanche Energy Max:0. Infineon Bss84Ph6327Xtsa2.
of Transistors:1; Noise Factor Typ:4dB; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:1P; Termination Type:Surface Mount Device; Voltage Vcbo:75V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:300MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.
of Transistors:1; Power Dissipation Ptot Max:330mW; Pulsed Current Icm:600mA; SMD Marking:2F; Termination Type:Surface Mount Device; Voltage Vcbo:60V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:200MHz; Power Dissipation Pd:330mW; DC Collector Current:600mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Infineon Smbt2907Ae6327Htsa1.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:208W; Pulse Current Idm:62.
9V MOSFET, N, COOLMOS, 650V, 47A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:415W; Transistor Case Style:TO-247; No. Infineon Spw47N60C3Fksa1.of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:141A; Termination Type:Through Hole; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.
05ppm/°C; Test Voltage:2500V; Transient Energy:20J; Varistor Voltage:100V; Varistor Voltage @ 1mA:100V; Varistor Voltage @ 1mA Max:110V; Varistor Voltage Tolerance +:10%; Varistor Voltage Tolerance -:10%.
05ppm/°C; Test Voltage:2500V; Transient Energy:35J; Varistor Voltage:180V; Varistor Voltage @ 1mA:180V; Varistor Voltage @ 1mA Max:198V; Varistor Voltage Tolerance +:10%; Varistor Voltage Tolerance -:10%.