Name: INFINEON :- Infineon Spd04N80C3Atma1
Brand: INFINEON
SKU: CAJF-21436
Price: 2.12 EUR
Availability: InStock

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

Infineon Spd06N80C3Atma1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:6A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Pulse Current Idm:18A; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

INFINEON

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

3A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.Infineon Spd07N60C3Atma1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:7.

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Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

INFINEON

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:63W; Transistor Case Style:TO-252; No.

Infineon Spd04N80C3Atma1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:4A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Pulse Current Idm:12A; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

INFINEON

MOSFET, N CH, 500V, 7.6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:560V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage; Available until stocks are exhausted

Infineon Spd08N50C3Atma1.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

INFINEON

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

3A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.Infineon Spd07N60C3Atma1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:7.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

INFINEON

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

Infineon Spd06N80C3Atma1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:6A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Pulse Current Idm:18A; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

INFINEON

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:63W; Transistor Case Style:TO-252; No.

Infineon Spd04N80C3Atma1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:4A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Pulse Current Idm:12A; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

INFINEON

MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:227W; Transistor Case Style:TO-263; No.

Infineon Spb17N80C3Atma1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:17A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

INFINEON

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:63W; Transistor Case Style:TO-252; No.

Infineon Spd04N80C3Atma1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:4A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Pulse Current Idm:12A; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

INFINEON

MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:227W; Transistor Case Style:TO-263; No.

Infineon Spb17N80C3Atma1 of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:17A; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Termination Type:Surface Mount Device; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V.

Eletrônicos

Componentes e placas de circuitos

Semicondutores

Semiconductors - Discretes

INFINEON

Specifications of Infineon Spd04N80C3Atma1
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Infineon Spd04N80C3Atma1

Semiconductors - Discretes

Specifications of Infineon Spd04N80C3Atma1

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:63W; Transistor Case Style:TO-252; No.

MOSFET, N CH, 500V, 7.6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:560V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage; Available until stocks are exhausted

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No.

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:63W; Transistor Case Style:TO-252; No.

MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:227W; Transistor Case Style:TO-263; No.

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:63W; Transistor Case Style:TO-252; No.

MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:227W; Transistor Case Style:TO-263; No.