P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max: 84R8028
Semiconductors - Discretes
Vishay Si2315Bds-T1-Ge3.
Specifications of Vishay Si2315Bds-T1-Ge3. | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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