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TAIYO YUDEN

Taiyo Yuden Jmk063Bj104Kp-F

About The 3V, X5R, 10%, 0201; Capacitance:0.1µF; Voltage(DC):6

CERAMIC CAPACITOR 0.1UF, 6.3V, X5R, 10%, 0201; Capacitance:0.1µF; Voltage(DC):6.3V; Capacitor Case / Package:0201 ^0603 Metric]; Capacitance Tolerance:± 10%; Dielectric Characteristic:X5R; Product Ran 08P5141

Passive Components

Taiyo Yuden Jmk063Bj104Kp-F

More from TAIYO YUDEN? CERAMIC CAPACITOR 0.1UF, 6.3V, X5R, 10%, 0201; Capacitance:0.1µF; Voltage(DC):6.3V; Capacitor Case / Package:0201 ^0603 Metric]; Capacitance Tolerance:± 10%; Dielectric Characteristic:X5R; Product Ran 08P5141
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Specifications of Taiyo Yuden Jmk063Bj104Kp-F

CategoryEletrônicos > Componentes e placas de circuitos > Componentes de circuito passivo > Capacitadores
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Taiyo Yuden Jmk063Bj104Kp-F
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Rating :- 9.91 /10
Votes :- 54
MOSFET, DUAL, NN, SO-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:3.1W; Transistor Case Style:SOIC; No.

MOSFET, DUAL, NN, SO-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:3.1W; Transistor Case Style:SOIC; No.

5V; Voltage Vgs th Max:1.5V; Voltage Vgs th Min:0.015ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Rise Time:10ns; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Rds on Measurement:4.

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  • VISHAY
    • MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:6W; Transistor Case Style:SOIC; No.

    MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:6W; Transistor Case Style:SOIC; No.

    Vishay Si4840Bdy-T1-E3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:12.4A; Junction Temperature Tj Max:150°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Rise Time:150ns; Termination Type:Surface Mount Device; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V.

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  • VISHAY
    • MOSFET, N/P, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No.
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  • VISHAY
    • MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:850mV; Power Dissipation Pd:710mW; Transistor Case Style:TO-236; No.
  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, DUAL, NN, SO-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:3.1W; Transistor Case Style:SOIC; No.

    MOSFET, DUAL, NN, SO-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:3.1W; Transistor Case Style:SOIC; No.

    5V; Voltage Vgs th Min:0.Vishay Si9926Cdy-T1-E3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Continuous Drain Current Id, N Channel:8A; Current Id Max:8A; Drain Source Voltage Vds, N Channel:20V; Junction Temperature Tj Max:150°C; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.5V; Voltage Vgs th Max:1.6V.

  • Eletrônicos
  • Componentes e placas de circuitos
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  • VISHAY
    • MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:6W; Transistor Case Style:SOIC; No.

    MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0074ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:6W; Transistor Case Style:SOIC; No.

    Vishay Si4840Bdy-T1-E3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:12.4A; Junction Temperature Tj Max:150°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Rise Time:150ns; Termination Type:Surface Mount Device; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V.

  • Eletrônicos
  • Componentes e placas de circuitos
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  • VISHAY
    • MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:850mV; Power Dissipation Pd:710mW; Transistor Case Style:TO-236; No.

    MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:850mV; Power Dissipation Pd:710mW; Transistor Case Style:TO-236; No.

    9A; Junction Temperature Tj Max:150°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Rise Time:7ns; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.Vishay Si2302Cds-T1-Ge3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:2.

  • Eletrônicos
  • Componentes e placas de circuitos
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  • VISHAY
    • CERAMIC CAPACITOR 0.1UF, 6.3V, X5R, 10%, 0201; Capacitance:0.1µF; Voltage(DC):6.3V; Capacitor Case / Package:0201 ^0603 Metric]; Capacitance Tolerance:± 10%; Dielectric Characteristic:X5R; Product Ran 08P5141
  • Eletrônicos
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  • Componentes de circuito passivo
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  • Passive Components
  • TAIYO YUDEN
    • MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:850mV; Power Dissipation Pd:710mW; Transistor Case Style:TO-236; No.

    MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:850mV; Power Dissipation Pd:710mW; Transistor Case Style:TO-236; No.

    5V; Voltage Vgs th Max:0.9A; Junction Temperature Tj Max:150°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Rise Time:7ns; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • CERAMIC CAPACITOR 0.1UF, 6.3V, X5R, 10%, 0201; Capacitance:0.1µF; Voltage(DC):6.3V; Capacitor Case / Package:0201 ^0603 Metric]; Capacitance Tolerance:± 10%; Dielectric Characteristic:X5R; Product Ran 08P5141
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