MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):0.39ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Dissipation Pd:600W; Transistor Case Style:ISOTOP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Avalanche Single Pulse Energy Eas:3J; Current Id Max:24A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:390mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:96A; Rate of Voltage Change dv / dt:5V/µs; Repetitive Avalanche Energy Max:60mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Screw; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Weight:0.04kg
Semiconductors - Discretes
Ixys Semiconductor Ixfn24N100
Specifications of Ixys Semiconductor Ixfn24N100 | |
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Category | Eletrônicos > Componentes e placas de circuitos > Semicondutores |
Instock | instock |
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