Nexperia Pumd4,115

047(Ratio); RF Transistor Case:SOT-363; No.2kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:0.2kohm; Resistance R2:47kohm; Transistor Type:Bias Resistor (BRT).

TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No. of Pins:6Pins; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:22kohm; Resistance R1 PNP:22kohm; Resistance R2:22kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN; Transistor Type:Bias Resistor (BRT); Transition Frequency ft:230MHz. of Pins:6 Pin; Product Range:PUMH1 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Current Ic hFE:5mA; DC Collector Current:100mA; DC Current Gain hFE:60hFE; Full Power Rating Temperature:25°C; Hfe Min:60; Module Configuration:Dual; No.

of Pins:6 Pin; Product Range:PUMD9 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):100mV; Continuous Collector Current Ic Max:100A; Current Ic Continuous a Max:100A; Current Ic hFE:5mA; DC Collector Current:100mA; DC Current Gain hFE:100hFE; Full Power Rating Temperature:25°C; Hfe Min:100; Module Configuration:Dual; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Resistance R1 PNP:10kohm; Resistance R2:47kohm; Transistor Case Style:SOT-363.

TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:-; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN, PNP; Voltage Vcbo:50V. of Pins:6Pins; No. of Pins:6 Pin; Product Range:PUMD4 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Continuous Collector Current Ic Max:100A; Current Ic Continuous a Max:100A; Current Ic hFE:1mA; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Full Power Rating Temperature:25°C; Hfe Min:200; Module Configuration:Dual; No.

of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Resistance R2:10kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN, PNP.

TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Resistance R1 PNP:10kohm; Resistance R2:47kohm; Transistor Case Style:SOT-363.

of Pins:6Pins; No. of Transistors:2; Operating Temperature Max:150°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:10kohm; Transistor Case Style:SOT-363; Transistor Polarity:NPN, PNP; Voltage Vcbo:50V.TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:-; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No.

of Pins:6 Pin; Product Range:PUMD3 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:5mA; DC Collector Current:100mA; DC Current Gain hFE:30hFE; Full Power Rating Temperature:25°C; Hfe Min:30; Module Configuration:Dual; No.TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No. of Pins:6Pins; No.

of Pins:6 Pin; Product Range:PUMD4 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):150mV; Continuous Collector Current Ic Max:100A; Current Ic Continuous a Max:100A; Current Ic hFE:1mA; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Full Power Rating Temperature:25°C; Hfe Min:200; Module Configuration:Dual; No. of Pins:6Pins; No.

TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No. of Pins:6Pins; No.