Onsemi Mjd50G

Rating :- 8.28 /10

Votes :- 53

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Av Current Ic:12A; Collector Emitter Saturation Voltage Vce(on):-2V; Continuous Collector Current Ic Max:12A; Current Ic Continuous a Max:12A; Current Ic hFE:5A; Full Power Rating Temperature:25Â°C; Gain Bandwidth ft Typ:100kHz; Hfe Min:1000; No.

Onsemi Bdv64Bg.of Transistors:1; Operating Temperature Min:-65Â°C; Operating Temperature Range:-65Â°C to +150Â°C; Power Dissipation Ptot Max:125W; Transistor Type:Darlington; Voltage Vcbo:100V DARLINGTON TRANSISTOR, SOT-93; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency ft:-; Power Dissipation Pd:125W; DC Collector Current:-10A; DC Current Gain hFE:1000hFE; Transistor Case Style:SOT-93; No.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Device Marking:MMBTA56; Gain Bandwidth ft Min:50MHz; Gain Bandwidth ft Typ:50MHz; Hfe Min:100; No.

Onsemi Mmbta56Lt1G.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Gain Bandwidth ft Min:100MHz; Hfe Min:100; No.

of Transistors:1; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Power Dissipation Ptot Max:225mW; SMD Marking:1GM; Tape Width:8mm; Voltage Vcbo:80V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No. Onsemi Mmbta06Lt1G.

DIODE, HIGH SPEED, 200MA, 100V, SOD-123; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1V; Reverse Recovery Time trr Max:4ns; Forward Surge Current Ifsm Max:2A; Operating Temperature Max:150Â°C; Diode Case Style:SOD-123; No.

Onsemi Mmsd4148T1G of Pins:2Pins; Product Range:MMSD4 Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (27-Jun-2018); Application Code:High Voltage; Current If @ Vf:10mA; Current Ifsm:1A; Forward Current If Max:200mA; Forward Voltage:1V; Junction Temperature Tj Max:150Â°C; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Power Dissipation Ptot Max:425mW; SMD Marking:51.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Device Marking:MMBTA56; Gain Bandwidth ft Min:50MHz; Gain Bandwidth ft Typ:50MHz; Hfe Min:100; No.

Onsemi Mmbta56Lt1G.of Transistors:1; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Power Dissipation Ptot Max:225mW; SMD Marking:2GM; Tape Width:8mm; Voltage Vcbo:80V TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:50MHz; Power Dissipation Pd:225mW; DC Collector Current:-500mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-23; No.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MMBTxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on):250mV; Continuous Collector Current Ic Max:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:100mA; Gain Bandwidth ft Min:100MHz; Hfe Min:100; No.

Onsemi Mmbta06Lt1G.of Transistors:1; Operating Temperature Min:-55Â°C; Operating Temperature Range:-55Â°C to +150Â°C; Power Dissipation Ptot Max:225mW; SMD Marking:1GM; Tape Width:8mm; Voltage Vcbo:80V TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case Style:SOT-23; No.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MJxxxx Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Application Code:PHVS; Av Current Ic:8A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:8A; Current Ib:4A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:8A; Current Ic hFE:5mA; Device Marking:MJE5852; External Depth:4.82mm; External Length / Height:30.02mm; External Width:10.28mm; Fall Time @ Ic:0.5Âµs; Full Power Rating Temperature:25Â°C; Hfe Min:5; Junction Temperature Tj Max:150Â°C; Junction Temperature Tj Min:-65Â°C; Junction to Case Thermal Resistance A:1.25Â°C/W; No.

of Transistors:1; Operating Temperature Min:-65Â°C; Power Dissipation Ptot Max:80W; Voltage Vces:450V TRANSISTOR, PNP, TO-220AB; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:-; Power Dissipation Pd:80W; DC Collector Current:8A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-220AB; No. Onsemi Mje5852G.

of Pins:4Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Application Code:PGP; Collector Emitter Saturation Voltage Vce(on):1V; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:200mA; External Depth:10.28mm; External Length / Height:2.38mm; External Width:6.73mm; Full Power Rating Temperature:25Â°C; Gain Bandwidth ft Min:10MHz; Gain Bandwidth ft Typ:10MHz; Hfe Min:25; No.

Onsemi Mjd50G.56W; DC Collector Current:1A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-252; No.of Transistors:1; Operating Temperature Min:-65Â°C; Operating Temperature Range:-65Â°C to +150Â°C; Power Dissipation Ptot Max:15W; SMD Marking:MJD50; Voltage Vcbo:500V TRANSISTOR, NPN, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:10MHz; Power Dissipation Pd:1.

of Pins:3Pins; Operating Temperature Max:150Â°C; Product Range:MJxxxx Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Application Code:PHVS; Av Current Ic:8A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:8A; Current Ib:4A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:8A; Current Ic hFE:5mA; Device Marking:MJE5852; External Depth:4.82mm; External Length / Height:30.02mm; External Width:10.28mm; Fall Time @ Ic:0.5Âµs; Full Power Rating Temperature:25Â°C; Hfe Min:5; Junction Temperature Tj Max:150Â°C; Junction Temperature Tj Min:-65Â°C; Junction to Case Thermal Resistance A:1.25Â°C/W; No.

of Pins:4Pins; Operating Temperature Max:150Â°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Application Code:PGP; Collector Emitter Saturation Voltage Vce(on):1V; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:200mA; External Depth:10.28mm; External Length / Height:2.38mm; External Width:6.73mm; Full Power Rating Temperature:25Â°C; Gain Bandwidth ft Min:10MHz; Gain Bandwidth ft Typ:10MHz; Hfe Min:25; No.

56W; DC Collector Current:1A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-252; No. Onsemi Mjd50G.of Transistors:1; Operating Temperature Min:-65Â°C; Operating Temperature Range:-65Â°C to +150Â°C; Power Dissipation Ptot Max:15W; SMD Marking:MJD50; Voltage Vcbo:500V TRANSISTOR, NPN, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:10MHz; Power Dissipation Pd:1.