of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:50W; Pulsed Current Icm:16A; Voltage Vcbo:150V TRANSISTOR, NPN, 150V, 8A, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:150V; Transition Frequency ft:30MHz; Power Dissipation Pd:50W; DC Collector Current:8A; DC Current Gain hFE:40hFE; Transistor Case Style:TO-220; No. Onsemi Mje15030G.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:15W; SMD Marking:MJD32C; Voltage Vcbo:100V TRANSISTOR, PNP, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No. Onsemi Mjd32Cg.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +200°C; Power Dissipation Ptot Max:180W; Voltage Vcbo:200V TRANSISTOR, PNP, TO-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency ft:18MHz; Power Dissipation Pd:180W; DC Collector Current:15A; DC Current Gain hFE:70hFE; Transistor Case Style:TO-3; No.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:50W; Voltage Vcbo:10VDC TRANSISTOR, PNP, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:40MHz; Power Dissipation Pd:70W; DC Collector Current:-10A; DC Current Gain hFE:60hFE; Transistor Case Style:TO-220; No. Onsemi D45H11G.
Littelfuse 2N6508G of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:250A; Holding Current Max Ih:40mA; Gate Trigger Voltage Max Vgt:1.5V; Operating Temperature Max:125°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Itsm:300A; Device Marking:2N6508; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +125°C; Repetitive Reverse Voltage Vrrm Max:600V; Termination Type:Through Hole; Thyristor Case:TO-220AB; Thyristor Type:Thyristor.
5V; Operating Temperature Max:125°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Itsm:300A; Device Marking:2N6507; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +125°C; Repetitive Reverse Voltage Vrrm Max:400V; Termination Type:Through Hole; Thyristor Case:TO-220AB; Thyristor Type:Thyristor.Littelfuse 2N6507G of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:250A; Holding Current Max Ih:40mA; Gate Trigger Voltage Max Vgt:1.
5V; Operating Temperature Max:125°C; Product Range:Silicon Controlled Rectifier (SRC); MSL:-; SVHC:No SVHC (12-Jan-2017); Current Itsm:300A; Device Marking:2N6509; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +125°C; Repetitive Reverse Voltage Vrrm Max:800V; Termination Type:Through Hole; Thyristor Case:TO-220AB; Thyristor Type:Thyristor.Littelfuse 2N6509G of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:250A; Holding Current Max Ih:40mA; Gate Trigger Voltage Max Vgt:1.
Littelfuse 2N6075Bg of Pins:3Pins; Operating Temperature Max:110°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Itsm:30A; Current Itsm @ 60Hz:30A; Current t2+g-:3mA; Current t2-g+:5mA; Current t2-g-:3mA; Gate Trigger Current Igt (Q1) t2+g+:3mA; Gate Trigger Current Max, Igt:3mA; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +110°C; Repetitive Reverse Voltage Vrrm Max:600V; Termination Type:Through Hole; Thyristor Case:TO-225; Thyristor Type:Triac.
Littelfuse Mcr106-8G of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:25A; Holding Current Max Ih:5mA; Gate Trigger Voltage Max Vgt:1V; Operating Temperature Max:110°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Itsm:25A; Device Marking:MCR106-8; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +110°C; Repetitive Reverse Voltage Vrrm Max:600V; Termination Type:Through Hole; Thyristor Case:TO-225AA; Thyristor Type:Thyristor.
Littelfuse Mac212A8G of Pins:3Pins; Operating Temperature Max:125°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Itsm:100A; Current Itsm @ 60Hz:100A; Current t2+g-:50mA; Current t2-g+:75mA; Current t2-g-:50mA; Gate Trigger Current Igt (Q1) t2+g+:50mA; Gate Trigger Current Max, Igt:35mA; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +125°C; Repetitive Reverse Voltage Vrrm Max:600V; Termination Type:Through Hole; Thyristor Case:TO-220AB; Thyristor Type:Triac.
Onsemi 1N5822Rlg of Pins:2Pins; Forward Voltage VF Max:525mV; Forward Surge Current Ifsm Max:80A; Operating Temperature Max:125°C; Product Range:1N5822 Series; Automotive Qualification Standard:-; SVHC:Lead (27-Jun-2018); Current If @ Vf:3A; Current Ifsm:80A; Device Marking:1N5822RL; Diode Type:Schottky; Forward Current If Max:3A; Forward Voltage:525mV; Junction Temperature Tj Max:125°C; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +125°C; Semiconductor Technology:Si.
of Pins:3Pins; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +175°C; Reverse Recovery Time trr Typ:60ns DIODE, ULTRAFAST, 16A, 600V; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):16A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:1. Onsemi Mur1660Ctg.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:26W; Voltage Vcbo:100V TRANSISTOR, NPN, TO-126; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:3MHz; Power Dissipation Pd:25W; DC Collector Current:2A; DC Current Gain hFE:3hFE; Transistor Case Style:TO-225AA; No. Onsemi Bd237G.
of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:36W; Voltage Vcbo:45V TRANSISTOR, NPN, TO-126; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:3MHz; Power Dissipation Pd:36W; DC Collector Current:4A; DC Current Gain hFE:85hFE; Transistor Case Style:TO-225AA; No. Onsemi Bd437G.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:70W; Transistor Type:Darlington; Voltage Vcbo:100V DARLINGTON TRANSISTOR, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:70W; DC Collector Current:10A; DC Current Gain hFE:750hFE; Transistor Case Style:TO-220; No.
Onsemi Bdx53Cg.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:60W; Transistor Type:Darlington; Voltage Vcbo:100V DARLINGTON TRANSISTOR, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:65W; DC Collector Current:8A; DC Current Gain hFE:750hFE; Transistor Case Style:TO-220; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +200°C; Power Dissipation Ptot Max:250W; Voltage Vcbo:350V TRANSISTOR, PNP, TO-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-200V; Transition Frequency ft:4MHz; Power Dissipation Pd:250W; DC Collector Current:-16A; DC Current Gain hFE:60hFE; Transistor Case Style:TO-3; No.
of Transistors:1; Operating Temperature Min:-55°C; Power Dissipation Ptot Max:20W; SMD Marking:MJD44H11; Voltage Vcbo:10VDC TRANSISTOR, NPN, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:85MHz; Power Dissipation Pd:20W; DC Collector Current:8A; DC Current Gain hFE:60hFE; Transistor Case Style:TO-252; No. Onsemi Mjd44H11G.
of Transistors:1; Operating Temperature Min:-55°C; Power Dissipation Ptot Max:20W; SMD Marking:MJD45H11; Voltage Vcbo:10VDC TRANSISTOR, PNP, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:90MHz; Power Dissipation Pd:20W; DC Collector Current:8A; DC Current Gain hFE:60hFE; Transistor Case Style:TO-252; No.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:80W; Voltage Vcbo:10VDC; Voltage Vces:700V TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:14MHz; Power Dissipation Pd:80W; DC Collector Current:8A; DC Current Gain hFE:4hFE; Transistor Case Style:TO-220; No. Onsemi Mje13007G.
of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:35W; Voltage Vcbo:10VDC; Voltage Vces:1kV TRANSISTOR, NPN, ISOWATT-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:450V; Transition Frequency ft:13MHz; Power Dissipation Pd:280mW; DC Collector Current:5A; DC Current Gain hFE:32hFE; Transistor Case Style:ISOWATT-220; No.
Onsemi Tip122G.of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +150°C; Power Dissipation Ptot Max:65W; Transistor Type:Darlington; Voltage Vcbo:100V DARLINGTON TRANSISTOR, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:65W; DC Collector Current:5A; DC Current Gain hFE:1000hFE; Transistor Case Style:TO-220; No.
7mm; External Length / Height:8.9mm; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +200°C; Power Dissipation Max:5W; Power Dissipation Ptot Max:5W; Test Current:150mA; Tolerance:5%; Zener Current:150mA.