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ONSEMI

Onsemi Mjd31Cg

About The 73mm; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:10; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Application Code:PGP; Collector Emitter Saturation Voltage Vce(on):1

TRANSISTOR, NPN, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:15W; DC Collector Current:3A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Application Code:PGP; Collector Emitter Saturation Voltage Vce(on):1.2V; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:3A; Current Ic hFE:1A; External Depth:10.28mm; External Length / Height:2.38mm; External Width:6.73mm; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:10; No. of Transistors:1; Operating Temperature Min:-65°C; Power Dissipation Ptot Max:15W; SMD Marking:MJD31C; Voltage Vcbo:100V

Semiconductors - Discretes

Onsemi Mjd31Cg

of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Application Code:PGP; Collector Emitter Saturation Voltage Vce(on):500mV; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:1A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:30MHz; Gain Bandwidth ft Typ:30MHz; Hfe Min:40; No.
of Pins:3Pins; Operating Temperature Max:150°C; Product Range:MJxxxx Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Alternate Case Style:TO-252; Collector Emitter Saturation Voltage Vce(on):-1.2V; Continuous Collector Current Ic Max:3A; Current Ic Continuous a Max:3A; Current Ic hFE:1A; External Depth:10.28mm; External Length / Height:2.38mm; External Width:6.73mm; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:10; No.
More from Of Transistors:1; Operating Temperature Min:-65°C; Power Dissipation Ptot Max:15W; SMD Marking:MJD31C; Voltage Vcbo:100V: Componentes E Placas De Circuitos
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Specifications of Onsemi Mjd31Cg

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Onsemi Mjd31Cg
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Rating :- 8.29 /10
Votes :- 55
THYRISTOR, 25A, 400V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:400V; Gate Trigger Current Max, Igt:40mA; Current It av:16A; On State RMS Current IT(rms):25A; Thyristor Case Style:TO-220AB; No.

THYRISTOR, 25A, 400V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:400V; Gate Trigger Current Max, Igt:40mA; Current It av:16A; On State RMS Current IT(rms):25A; Thyristor Case Style:TO-220AB; No.

5V; Operating Temperature Max:125°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Itsm:300A; Device Marking:2N6507; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +125°C; Repetitive Reverse Voltage Vrrm Max:400V; Termination Type:Through Hole; Thyristor Case:TO-220AB; Thyristor Type:Thyristor.Littelfuse 2N6507G of Pins:3Pins; Peak Non Rep Surge Current Itsm 50Hz:250A; Holding Current Max Ih:40mA; Gate Trigger Voltage Max Vgt:1.

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  • LITTELFUSE
    • THYRISTOR, 25A, 600V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:40mA; Current It av:16A; On State RMS Current IT(rms):25A; Thyristor Case Style:TO-220AB; No.

    THYRISTOR, 25A, 600V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:40mA; Current It av:16A; On State RMS Current IT(rms):25A; Thyristor Case Style:TO-220AB; No.

    5V; Operating Temperature Max:125°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Itsm:300A; Device Marking:2N6508; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +125°C; Repetitive Reverse Voltage Vrrm Max:600V; Termination Type:Through Hole; Thyristor Case:TO-220AB; Thyristor Type:Thyristor.

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  • LITTELFUSE
    • of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:SOT-78B; Collector Emitter Saturation Voltage Vce(on):-1V; Continuous Collector Current Ic Max:10A; Current Ic Continuous a Max:10A; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:40MHz; Hfe Min:60; No.

    of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:SOT-78B; Collector Emitter Saturation Voltage Vce(on):-1V; Continuous Collector Current Ic Max:10A; Current Ic Continuous a Max:10A; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:40MHz; Hfe Min:60; No.

    of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:50W; Voltage Vcbo:10VDC TRANSISTOR, PNP, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:40MHz; Power Dissipation Pd:70W; DC Collector Current:-10A; DC Current Gain hFE:60hFE; Transistor Case Style:TO-220; No. Onsemi D45H11G.

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  • ONSEMI
    • of Pins:2Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:TO-204AA; Collector Emitter Saturation Voltage Vce(on):-1.1V; Continuous Collector Current Ic Max:15A; Current Ic Continuous a Max:15A; Current Ic hFE:4A; Device Marking:MJ15016G; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:2.2MHz; Gain Bandwidth ft Typ:18MHz; Hfe Min:20; No.

    of Pins:2Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:TO-204AA; Collector Emitter Saturation Voltage Vce(on):-1.1V; Continuous Collector Current Ic Max:15A; Current Ic Continuous a Max:15A; Current Ic hFE:4A; Device Marking:MJ15016G; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:2.2MHz; Gain Bandwidth ft Typ:18MHz; Hfe Min:20; No.

    of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +200°C; Power Dissipation Ptot Max:180W; Voltage Vcbo:200V TRANSISTOR, PNP, TO-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency ft:18MHz; Power Dissipation Pd:180W; DC Collector Current:15A; DC Current Gain hFE:70hFE; Transistor Case Style:TO-3; No. Onsemi Mj15016G.

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  • ONSEMI
    • of Pins:2Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:TO-204AA; Collector Emitter Saturation Voltage Vce(on):-1.1V; Continuous Collector Current Ic Max:15A; Current Ic Continuous a Max:15A; Current Ic hFE:4A; Device Marking:MJ15016G; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:2.2MHz; Gain Bandwidth ft Typ:18MHz; Hfe Min:20; No.

    of Pins:2Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Alternate Case Style:TO-204AA; Collector Emitter Saturation Voltage Vce(on):-1.1V; Continuous Collector Current Ic Max:15A; Current Ic Continuous a Max:15A; Current Ic hFE:4A; Device Marking:MJ15016G; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:2.2MHz; Gain Bandwidth ft Typ:18MHz; Hfe Min:20; No.

    of Transistors:1; Operating Temperature Min:-65°C; Operating Temperature Range:-65°C to +200°C; Power Dissipation Ptot Max:180W; Voltage Vcbo:200V TRANSISTOR, PNP, TO-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency ft:18MHz; Power Dissipation Pd:180W; DC Collector Current:15A; DC Current Gain hFE:70hFE; Transistor Case Style:TO-3; No.

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  • ONSEMI