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Vishay Si1012Cr-T1-Ge3

About The 5A, SC75A; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4

MOSFET, N CH, W/D, 20V, 0.5A, SC75A; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:240mW; Transistor Case Style:SC-75A; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C

Semiconductors - Discretes

Vishay Si1012Cr-T1-Ge3

Semiconductors - Discretes

Specifications of Vishay Si1012Cr-T1-Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Si1012Cr-T1-Ge3
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Rating :- 8.1 /10
Votes :- 53
MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.2V; Power Dissipation Pd:4.2W; Transistor Case Style:SOIC; No.

MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.2V; Power Dissipation Pd:4.2W; Transistor Case Style:SOIC; No.

Vishay Si4447Ady-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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    • MOSFET, P CH, W/D, 20V, 13.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-400mV; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No.

    MOSFET, P CH, W/D, 20V, 13.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-400mV; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No.

    Vishay Si4403Cdy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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    • MOSFET, P CH, W/D, 20V, 6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:2.5W; Transistor Case Style:TO-236; No.

    MOSFET, P CH, W/D, 20V, 6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:2.5W; Transistor Case Style:TO-236; No.

    Vishay Si2399Ds-T1-Ge3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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  • VISHAY
    • MOSFET, N CH, W/D, 30V, 5.8A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-23; No.

    MOSFET, N CH, W/D, 30V, 5.8A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:2.1W; Transistor Case Style:SOT-23; No.

    Vishay Si2366Ds-T1-Ge3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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  • VISHAY
    • MOSFET, P CH, W/ESD, 20V, 2A, SOT363; Transistor Polarity:P Channel; Continuous Drain Current Id:-2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-400mV; Power Dissipation Pd:2.8W; Transistor Case Style:SOT-363; No.

    MOSFET, P CH, W/ESD, 20V, 2A, SOT363; Transistor Polarity:P Channel; Continuous Drain Current Id:-2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-400mV; Power Dissipation Pd:2.8W; Transistor Case Style:SOT-363; No.

    Vishay Si1427Edh-T1-Ge3 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • VISHAY
    • MOSFET, N CH, W/D, 20V, 4A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:2.8W; Transistor Case Style:SOT-363; No.

    MOSFET, N CH, W/D, 20V, 4A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:2.8W; Transistor Case Style:SOT-363; No.

    Vishay Si1424Edh-T1-Ge3 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
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  • VISHAY
    • MOSFET, P CH, W/D, 20V, 1.4A, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:450mV; Power Dissipation Pd:500mW; Transistor Case Style:SOT-323; No.

    MOSFET, P CH, W/D, 20V, 1.4A, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:450mV; Power Dissipation Pd:500mW; Transistor Case Style:SOT-323; No.

    Vishay Si1317Dl-T1-Ge3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-50°C; Operating Temperature Range:-50°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N CH, W/D, 20V, 0.5A, SC75A; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:240mW; Transistor Case Style:SC-75A; No.

    MOSFET, N CH, W/D, 20V, 0.5A, SC75A; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:240mW; Transistor Case Style:SC-75A; No.

    Vishay Si1012Cr-T1-Ge3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P CH, W/D, 20V, 1.4A, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:450mV; Power Dissipation Pd:500mW; Transistor Case Style:SOT-323; No.

    MOSFET, P CH, W/D, 20V, 1.4A, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:450mV; Power Dissipation Pd:500mW; Transistor Case Style:SOT-323; No.

    Vishay Si1317Dl-T1-Ge3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-50°C; Operating Temperature Range:-50°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, N CH, W/D, 20V, 0.5A, SC75A; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:240mW; Transistor Case Style:SC-75A; No.

    MOSFET, N CH, W/D, 20V, 0.5A, SC75A; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:240mW; Transistor Case Style:SC-75A; No.

    Vishay Si1012Cr-T1-Ge3 of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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  • Componentes e placas de circuitos
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  • VISHAY