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Vishay Si4447Ady-T1-Ge3

About The 2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C

MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.2V; Power Dissipation Pd:4.2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C

Semiconductors - Discretes

Vishay Si4447Ady-T1-Ge3

More from Semicondutores! Of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C To +150°C
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Semiconductors - Discretes

Specifications of Vishay Si4447Ady-T1-Ge3

CategoryEletrônicos > Componentes e placas de circuitos > Semicondutores
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Vishay Si4447Ady-T1-Ge3
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Votes :- 53
MOSFET, NP CH, 30V, W DIODE, SOT363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.323ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-363; No.

MOSFET, NP CH, 30V, W DIODE, SOT363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.323ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-363; No.

74ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.Vishay Si1539Cdl-T1-Ge3 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Continuous Drain Current Id, N Channel:700mA; Continuous Drain Current Id, P Channel:-500mA; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.323ohm; On Resistance Rds(on), P Channel:0.

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    • MOSFET, NP CH, 20V, W DIODE, SOT563F; Transistor Polarity:N and P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:220mW; Transistor Case Style:SOT-563; No.

    MOSFET, NP CH, 20V, W DIODE, SOT563F; Transistor Polarity:N and P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:220mW; Transistor Case Style:SOT-563; No.

    Vishay Si1016Cx-T1-Ge3 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Continuous Drain Current Id, N Channel:600mA; Continuous Drain Current Id, P Channel:-600mA; Drain Source Voltage Vds, N Channel:20V; Drain Source Voltage Vds, P Channel:-20V; Module Configuration:High Side; On Resistance Rds(on), N Channel:0.33ohm; On Resistance Rds(on), P Channel:0.63ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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    • MOSFET, NP CH, 30V, W DIODE, TSOP6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.062ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:830mW; Transistor Case Style:TSOP; No.

    MOSFET, NP CH, 30V, W DIODE, TSOP6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.062ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:830mW; Transistor Case Style:TSOP; No.

    Vishay Si3590Dv-T1-Ge3 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Continuous Drain Current Id, N Channel:3A; Continuous Drain Current Id, P Channel:-2A; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.062ohm; On Resistance Rds(on), P Channel:0.135ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

  • Eletrônicos
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  • VISHAY
    • MOSFET, NP CH, 30V, W DIODE, SOT363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.323ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-363; No.

    MOSFET, NP CH, 30V, W DIODE, SOT363; Transistor Polarity:N and P Channel; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.323ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:340mW; Transistor Case Style:SOT-363; No.

    Vishay Si1539Cdl-T1-Ge3 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Continuous Drain Current Id, N Channel:700mA; Continuous Drain Current Id, P Channel:-500mA; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Module Configuration:Dual; On Resistance Rds(on), N Channel:0.74ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

  • Eletrônicos
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  • VISHAY
    • MOSFET, NP CH, 20V, W DIODE, SOT563F; Transistor Polarity:N and P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:220mW; Transistor Case Style:SOT-563; No.

    MOSFET, NP CH, 20V, W DIODE, SOT563F; Transistor Polarity:N and P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Power Dissipation Pd:220mW; Transistor Case Style:SOT-563; No.

    33ohm; On Resistance Rds(on), P Channel:0.Vishay Si1016Cx-T1-Ge3 of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Continuous Drain Current Id, N Channel:600mA; Continuous Drain Current Id, P Channel:-600mA; Drain Source Voltage Vds, N Channel:20V; Drain Source Voltage Vds, P Channel:-20V; Module Configuration:High Side; On Resistance Rds(on), N Channel:0.63ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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    • MOSFET, P CH, W/D, 20V, 18.6A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No.

    MOSFET, P CH, W/D, 20V, 18.6A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No.

    Vishay Si4463Cdy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
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  • VISHAY
    • MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.2V; Power Dissipation Pd:4.2W; Transistor Case Style:SOIC; No.

    MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.2V; Power Dissipation Pd:4.2W; Transistor Case Style:SOIC; No.

    Vishay Si4447Ady-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

  • Eletrônicos
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  • VISHAY
    • MOSFET, P CH, W/D, 20V, 13.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-400mV; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No.

    MOSFET, P CH, W/D, 20V, 13.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-400mV; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No.

    Vishay Si4403Cdy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.2V; Power Dissipation Pd:4.2W; Transistor Case Style:SOIC; No.

    MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.2V; Power Dissipation Pd:4.2W; Transistor Case Style:SOIC; No.

    Vishay Si4447Ady-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

  • Eletrônicos
  • Componentes e placas de circuitos
  • Semicondutores
  • Semiconductors - Discretes
  • VISHAY
    • MOSFET, P CH, W/D, 20V, 13.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-400mV; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No.

    MOSFET, P CH, W/D, 20V, 13.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-400mV; Power Dissipation Pd:5W; Transistor Case Style:SOIC; No.

    Vishay Si4403Cdy-T1-Ge3 of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C.

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